| 9496377 |
Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base |
Renata Camillo-Castillo, Peng Cheng, Vibhor Jain, John J. Pekarik |
2016-11-15 |
$8,353,000 |
| 9461090 |
Photodetector and method of forming the photodetector on stacked trench isolation regions |
John J. Ellis-Monaghan, Steven M. Shank |
2016-10-04 |
$4,373,000 |
| 9435948 |
Silicon waveguide structure with arbitrary geometry on bulk silicon substrate, related systems and program products |
Robert K. Leidy, Mark D. Levy, Gary L. Milo, Steven M. Shank |
2016-09-06 |
$2,673,000 |
| 9437717 |
Interface control in a bipolar junction transistor |
Kevin K. Chan, Peng Cheng, Ljubo Radic |
2016-09-06 |
$2,673,000 |
| 9437539 |
Dielectric region in a bulk silicon substrate providing a high-Q passive resonator |
James S. Dunn, Zhong-Xiang He |
2016-09-06 |
$4,975,000 |
| 9385022 |
Silicon waveguide on bulk silicon substrate and methods of forming |
Mark D. Jaffe, Alvin J. Joseph, Anthony K. Stamper |
2016-07-05 |
$2,704,000 |
| 9355972 |
Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonator |
James S. Dunn, Zhong-Xiang He |
2016-05-31 |
$4,553,000 |
| 9356097 |
Method of forming a bipolar transistor with maskless self-aligned emitter |
David L. Harame, Vikas K. Kaushal, Marwan H. Khater |
2016-05-31 |
$2,120,000 |
| 9356014 |
High-voltage metal-insulator-semiconductor field effect transistor structures |
William F. Clark, Jr., John J. Pekarik, Yun Shi, Yanli Zhang |
2016-05-31 |
$2,120,000 |
| 9349793 |
Semiconductor structure with airgap |
Mark D. Jaffe, Alvin J. Joseph, Anthony K. Stamper |
2016-05-24 |
$3,942,000 |
| 9349880 |
Semiconductor devices with semiconductor bodies having interleaved horizontal portions and method of forming the devices |
Christopher J. Funch, Dean W. Siegel |
2016-05-24 |
$1,910,000 |
| 9349845 |
Self-aligned bipolar junction transistors |
David L. Harame |
2016-05-24 |
$1,910,000 |
| 9343589 |
Field effect transistor (FET) with self-aligned double gates on bulk silicon substrate, methods of forming, and related design structures |
James W. Adkisson, James S. Dunn, Blaine J. Gross, David L. Harame, John J. Pekarik |
2016-05-17 |
$1,734,000 |
| 9337323 |
Trench isolation for bipolar junction transistors in BiCMOS technology |
James S. Dunn |
2016-05-10 |
$1,020,000 |
| 9337078 |
Heat dissipation through device isolation |
Jeffrey P. Gambino, Zhenzhen Ye, Yan Zhang |
2016-05-10 |
$1,020,000 |
| 9324828 |
Vertical P-type, N-type, P-type (PNP) junction integrated circuit (IC) structure, and methods of forming |
Joseph R. Greco, Aaron L. Vallett, Robert F. Vatter |
2016-04-26 |
$2,956,000 |
| 9323008 |
Optoelectronic structures having multi-level optical waveguides and methods of forming the structures |
Zhong-Xiang He, Ronald G. Meunier, Steven M. Shank |
2016-04-26 |
$1,566,000 |
| 9318584 |
Isolation scheme for bipolar transistors in BiCMOS technology |
Peng Cheng, Peter B. Gray, Vibhor Jain, Robert K. Leidy |
2016-04-19 |
$757,000 |
| 9312370 |
Bipolar transistor with extrinsic base region and methods of fabrication |
James W. Adkisson, David L. Harame, Michael L. Kerbaugh, John J. Pekarik |
2016-04-12 |
$1,143,000 |
| 9274277 |
Waveguide devices with supporting anchors |
Brennan J. Brown, James R. Elliott, Steven M. Shank |
2016-03-01 |
$579,000 |
| 9276093 |
Self-aligned emitter-base region |
Margaret A. Faucher, Paula M. Fisher, Thomas H. Gabert, Joseph P. Hasselbach, Glenn C. MacDougall |
2016-03-01 |
$579,000 |
| 9276002 |
Integrated circuit structure with bulk silicon FinFET |
Kangguo Cheng, Ali Khakifirooz, Edward J. Nowak, Jed H. Rankin |
2016-03-01 |
$579,000 |
| 9269787 |
Base profile of self-aligned bipolar transistors for power amplifier applications |
James S. Dunn, James S. Nakos |
2016-02-23 |
|
| 9240448 |
Bipolar junction transistors with reduced base-collector junction capacitance |
James W. Adkisson, James R. Elliott, David L. Harame, Marwan H. Khater, Robert K. Leidy +1 more |
2016-01-19 |
$1,034,000 |
| 9236499 |
Junction field-effect transistor with raised source and drain regions formed by selective epitaxy |
Kevin K. Chan, John J. Ellis-Monaghan, David L. Harame, John J. Pekarik |
2016-01-12 |
$510,000 |
