| 9472408 |
Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress |
Takashi Ando, Veeraraghavan S. Basker, Hemanth Jagannathan, Tenko Yamashita |
2016-10-18 |
| 9412596 |
Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress |
Takashi Ando, Veeraraghavan S. Basker, Hemanth Jagannathan, Tenko Yamashita |
2016-08-09 |
| 9337315 |
FinFET spacer formation by oriented implantation |
Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris |
2016-05-10 |
| 9331174 |
Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe) |
Bruce B. Doris, Lahir M. Shaik Adam, Balasubramanian S. Haran |
2016-05-03 |
| 9318578 |
FinFET spacer formation by oriented implantation |
Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris |
2016-04-19 |
| 9312136 |
Replacement metal gate stack for diffusion prevention |
Takashi Ando, Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok, Tenko Yamashita |
2016-04-12 |
| 9263454 |
Semiconductor structure having buried conductive elements |
Emre Alptekin, Pooja R. Batra, Kangguo Cheng, Ramachandra Divakaruni, Reinaldo Vega |
2016-02-16 |
| 9245892 |
Semiconductor structure having buried conductive elements |
Emre Alptekin, Pooja R. Batra, Kangguo Cheng, Ramachandra Divakaruni, Reinaldo Vega |
2016-01-26 |
| 9240447 |
finFETs containing improved strain benefit and self aligned trench isolation structures |
Kangguo Cheng, Ali Khakifirooz |
2016-01-19 |
