Issued Patents 2016
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9472408 | Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress | Takashi Ando, Veeraraghavan S. Basker, Hemanth Jagannathan, Tenko Yamashita | 2016-10-18 |
| 9412596 | Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress | Takashi Ando, Veeraraghavan S. Basker, Hemanth Jagannathan, Tenko Yamashita | 2016-08-09 |
| 9337315 | FinFET spacer formation by oriented implantation | Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris | 2016-05-10 |
| 9331174 | Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe) | Bruce B. Doris, Lahir M. Shaik Adam, Balasubramanian S. Haran | 2016-05-03 |
| 9318578 | FinFET spacer formation by oriented implantation | Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris | 2016-04-19 |
| 9312136 | Replacement metal gate stack for diffusion prevention | Takashi Ando, Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok, Tenko Yamashita | 2016-04-12 |
| 9263454 | Semiconductor structure having buried conductive elements | Emre Alptekin, Pooja R. Batra, Kangguo Cheng, Ramachandra Divakaruni, Reinaldo Vega | 2016-02-16 |
| 9245892 | Semiconductor structure having buried conductive elements | Emre Alptekin, Pooja R. Batra, Kangguo Cheng, Ramachandra Divakaruni, Reinaldo Vega | 2016-01-26 |
| 9240447 | finFETs containing improved strain benefit and self aligned trench isolation structures | Kangguo Cheng, Ali Khakifirooz | 2016-01-19 |