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Home › Method of making a semiconductor device having a semiconductor material on a relaxed semiconductor including replacing a strained, selective etchable material, with a low density dielectric in a cavity

Method of making a semiconductor device having a semiconductor material on a relaxed semiconductor including replacing a strained, selective etchable material, with a low density dielectric in a cavity

US Patent 9530669 · Granted Dec 27, 2016

Estimated economic value: $3,909,000 ⓘ

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