Issued Patents 2016
Showing 51–75 of 175 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9466673 | Complementary metal-oxide silicon having silicon and silicon germanium channels | Gen P. Lauer, Isaac Lauer, Jeffrey W. Sleight | 2016-10-11 |
| 9466616 | Uniform junction formation in FinFETs | Eric C. Harley, Judson R. Holt, Yue Ke, Timothy J. McArdle, Shogo Mochizuki | 2016-10-11 |
| 9466672 | Reduced defect densities in graded buffer layers by tensile strained interlayers | Kangguo Cheng, Keith E. Fogel, Pouya Hashemi, John A. Ott | 2016-10-11 |
| 9466690 | Precisely controlling III-V height | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2016-10-11 |
| 9466567 | Nanowire compatible E-fuse | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-10-11 |
| 9466602 | Embedded dynamic random access memory field effect transistor device | Veeraraghavan S. Basker, Shogo Mochizuki, Dominic J. Schepis | 2016-10-11 |
| 9461052 | Embedded dynamic random access memory field effect transistor device | Veeraraghavan S. Basker, Shogo Mochizuki, Dominic J. Schepis | 2016-10-04 |
| 9461146 | Overhang hardmask to prevent parasitic epitaxial nodules at gate end during source drain epitaxy | Kangguo Cheng, Pouya Hashemi, Shogo Mochizuki | 2016-10-04 |
| 9455336 | SiGe and Si FinFET structures and methods for making the same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-09-27 |
| 9455141 | Silicon-germanium fin of height above critical thickness | Kanggou Cheng, Ali Khakifirooz, Dominic J. Schepis | 2016-09-27 |
| 9449885 | High germanium content FinFET devices having the same contact material for nFET and pFET devices | — | 2016-09-20 |
| 9449921 | Voidless contact metal structures | Veeraraghavan S. Basker, Nicolas L. Breil, Oleg Gluschenkov, Shogo Mochizuki | 2016-09-20 |
| 9450079 | FinFET having highly doped source and drain regions | Kangguo Cheng, Ali Khakifirooz, Dominic J. Schepis | 2016-09-20 |
| 9443940 | Defect reduction with rotated double aspect ratio trapping | Keith E. Fogel, Judson R. Holt, Pranita Kerber | 2016-09-13 |
| 9443948 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-09-13 |
| 9443873 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Qiqing C. Ouyang, Dominic J. Schepis | 2016-09-13 |
| 9443963 | SiGe FinFET with improved junction doping control | Pranita Kerber, Qiqing C. Ouyang | 2016-09-13 |
| 9443982 | Vertical transistor with air gap spacers | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2016-09-13 |
| 9443853 | Minimizing shorting between FinFET epitaxial regions | Kangguo Cheng, Balasubramanian Pranatharthiharan, Charan V. Surisetty | 2016-09-13 |
| 9437427 | Controlled confined lateral III-V epitaxy | Karthik Balakrishnan, Lukas Czornomaz, Pouya Hashemi | 2016-09-06 |
| 9437502 | Method to form stacked germanium nanowires and stacked III-V nanowires | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2016-09-06 |
| 9437675 | eDRAM for planar III-V semiconductor devices | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-09-06 |
| 9437714 | Selective gate contact fill metallization | Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang | 2016-09-06 |
| 9437679 | Semi-conductor device with epitaxial source/drain facetting provided at the gate edge | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-09-06 |
| 9431265 | Fin cut for tight fin pitch by two different sit hard mask materials on fin | Kangguo Cheng, Ali Khakifirooz, Tenko Yamashita | 2016-08-30 |