Issued Patents 2016
Showing 76–100 of 175 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9425293 | Stacked nanowires with multi-threshold voltage solution for pFETs | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2016-08-23 |
| 9425291 | Stacked nanosheets by aspect ratio trapping | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2016-08-23 |
| 9419074 | Non-planar semiconductor device with aspect ratio trapping | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2016-08-16 |
| 9419138 | Embedded carbon-doped germanium as stressor for germanium nFET devices | Jeffrey L. Dittmar, Keith E. Fogel, Sebastian Naczas, Devendra K. Sadana | 2016-08-16 |
| 9419079 | Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with epitaxial rare earth oxide interlayers and methods to fabricate same | — | 2016-08-16 |
| 9419078 | Floating body memory with asymmetric channel | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-08-16 |
| 9418841 | Type III-V and type IV semiconductor device formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-08-16 |
| 9412865 | Reduced resistance short-channel InGaAs planar MOSFET | Pranita Kerber, Qiqing C. Ouyang | 2016-08-09 |
| 9406545 | Bulk semiconductor fins with self-aligned shallow trench isolation structures | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2016-08-02 |
| 9406529 | Formation of FinFET junction | Kevin K. Chan, Pouya Hashemi, Ali Khakifirooz, John A. Ott | 2016-08-02 |
| 9406748 | Perfectly shaped controlled nanowires | Karthik Balakrishnan, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi | 2016-08-02 |
| 9406506 | Lattice matched aspect ratio trapping to reduce defects in III-V layer directly grown on silicon | Keith E. Fogel, Pouya Hashemi, Ali Khakifirooz | 2016-08-02 |
| 9401373 | Multi-fin finFETs with merged-fin source/drains and replacement gates | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2016-07-26 |
| 9401311 | Self aligned structure and method for high-K metal gate work function tuning | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-07-26 |
| 9390925 | Silicon—germanium (SiGe) fin formation | Kangguo Cheng, Ali Khakifirooz, Dominic J. Schepis | 2016-07-12 |
| 9391198 | Strained semiconductor trampoline | Pranita Kerber, Qiqing C. Ouyang, Dominic J. Schepis | 2016-07-12 |
| 9391173 | FinFET device with vertical silicide on recessed source/drain epitaxy regions | Keith E. Fogel, Pranita Kerber, Qiqing C. Ouyang | 2016-07-12 |
| 9391077 | SiGe and Si FinFET structures and methods for making the same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-07-12 |
| 9391069 | MIM capacitor with enhanced capacitance formed by selective epitaxy | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Raghavasimhan Sreenivasan | 2016-07-12 |
| 9390980 | III-V compound and germanium compound nanowire suspension with germanium-containing release layer | Guy M. Cohen, Isaac Lauer, Jeffrey W. Sleight | 2016-07-12 |
| 9385218 | Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy | Kangguo Cheng, Pouya Hashemi | 2016-07-05 |
| 9385231 | Device structure with increased contact area and reduced gate capacitance | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2016-07-05 |
| 9385023 | Method and structure to make fins with different fin heights and no topography | Kangguo Cheng, Joel P. de Souza, Ali Khakifirooz, Dominic J. Schepis | 2016-07-05 |
| 9378952 | Tall relaxed high percentage silicon germanium fins on insulator | Veeraraghavan S. Basker, Oleg Gluschenkov, Shogo Mochizuki | 2016-06-28 |
| 9379243 | Field-effect transistor with aggressively strained fins | Pouya Hashemi, Ali Khakifirooz | 2016-06-28 |