Issued Patents 2016
Showing 101–125 of 175 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9379219 | SiGe finFET with improved junction doping control | Pranita Kerber, Qiqing C. Ouyang | 2016-06-28 |
| 9379204 | Lattice matched aspect ratio trapping to reduce defects in III-V layer directly grown on silicon | Keith E. Fogel, Pouya Hashemi, Ali Khakifirooz | 2016-06-28 |
| 9379111 | Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2016-06-28 |
| 9378948 | FinFET structures having silicon germanium and silicon fins | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-06-28 |
| 9373637 | Epitaxial semiconductor resistor with semiconductor structures on same substrate | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2016-06-21 |
| 9373639 | Thin channel-on-insulator MOSFET device with n+ epitaxy substrate and embedded stressor | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-06-21 |
| 9373638 | Complementary metal-oxide silicon having silicon and silicon germanium channels | Gen P. Lauer, Isaac Lauer, Jeffrey W. Sleight | 2016-06-21 |
| 9373624 | FinFET devices including epitaxially grown device isolation regions, and a method of manufacturing same | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2016-06-21 |
| 9368492 | Forming fins of different materials on the same substrate | Kangguo Cheng, Ali Khakifirooz, Dominic J. Schepis | 2016-06-14 |
| 9368512 | Double diamond shaped unmerged epitaxy for tall fins in tight pitch | Kangguo Cheng, Dominic J. Schepis, Charan V. Surisetty | 2016-06-14 |
| 9368350 | Tone inverted directed self-assembly (DSA) fin patterning | Hong He, Chi-Chun Liu, Chiahsun Tseng, Tenko Yamashita | 2016-06-14 |
| 9362182 | Forming strained fins of different material on a substrate | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-06-07 |
| 9362400 | Semiconductor device including dielectrically isolated finFETs and buried stressor | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Kern Rim | 2016-06-07 |
| 9362383 | Highly scaled tunnel FET with tight pitch and method to fabricate same | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2016-06-07 |
| 9362362 | FinFET with dielectric isolated channel | Kangguo Cheng, Ali Khakifirooz, Soon-Cheon Seo | 2016-06-07 |
| 9362310 | Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Hong He, Ali Khakifirooz | 2016-06-07 |
| 9362309 | FinFET and method of fabrication | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2016-06-07 |
| 9356027 | Dual work function integration for stacked FinFET | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2016-05-31 |
| 9356163 | Structure and method of integrating waveguides, photodetectors and logic devices | Fei Liu, Christine Qiqing Ouyang, Jeremy D. Schaub | 2016-05-31 |
| 9355887 | Dual trench isolation for CMOS with hybrid orientations | Victor Chan, Meikei Ieong, Rajesh Rengarajan, Chun-Yung Sung, Min Yang | 2016-05-31 |
| 9349808 | Double aspect ratio trapping | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-05-24 |
| 9349868 | Gate all-around FinFET device and a method of manufacturing same | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2016-05-24 |
| 9349835 | Methods for replacing gate sidewall materials with a low-k spacer | Kangguo Cheng, Ali Khakifirooz, Charan V. Surisetty | 2016-05-24 |
| 9349809 | Aspect ratio trapping and lattice engineering for III/V semiconductors | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2016-05-24 |
| 9349594 | Non-planar semiconductor device with aspect ratio trapping | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2016-05-24 |