Issued Patents 2016
Showing 151–175 of 175 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9293459 | Method and structure for improving finFET with epitaxy source/drain | Kangguo Cheng, Ali Khakifirooz, Tenko Yamashita | 2016-03-22 |
| 9293576 | Semiconductor device with low-k gate cap and self-aligned contact | Kangguo Cheng, Ali Khakifirooz, Charan V. Surisetty | 2016-03-22 |
| 9293532 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-03-22 |
| 9293530 | High aspect ratio trapping semiconductor with uniform height and isolated from bulk substrate | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2016-03-22 |
| 9293373 | Method for fabricating CMOS finFETs with dual channel material | Kangguo Cheng, Ali Khakifirooz, Pouya Hashemi | 2016-03-22 |
| 9287135 | Sidewall image transfer process for fin patterning | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy | 2016-03-15 |
| 9287358 | Stressed nanowire stack for field effect transistor | Martin M. Frank, Pouya Hashemi, Ali Khakifirooz | 2016-03-15 |
| 9287264 | Epitaxially grown silicon germanium channel FinFET with silicon underlayer | Kangguo Cheng, Eric C. Harley, Judson R. Holt, Gauri Karve, Yue Ke +4 more | 2016-03-15 |
| 9281198 | Method of fabricating a semiconductor device including embedded crystalline back-gate bias planes | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan | 2016-03-08 |
| 9275854 | Compound semiconductor integrated circuit and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-03-01 |
| 9276118 | FinFET device having a merge source drain region under contact areas and unmerged fins between contact areas, and a method of manufacturing same | Pranita Kerber, Qiqing C. Ouyang | 2016-03-01 |
| 9276113 | Structure and method to make strained FinFET with improved junction capacitance and low leakage | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Kern Rim | 2016-03-01 |
| 9275908 | Semiconductor device including gate channel having adjusted threshold voltage | Pranita Kerber, Qiqing C. Ouyang | 2016-03-01 |
| 9269627 | Fin cut on SIT level | Kangguo Cheng, Ali Khakifirooz, Tenko Yamashita | 2016-02-23 |
| 9263584 | Field effect transistors employing a thin channel region on a crystalline insulator structure | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-02-16 |
| 9263453 | Secondary use of aspect ratio trapping holes as eDRAM structure | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-02-16 |
| 9257531 | Self-aligned contact structure for replacement metal gate | Soon-Cheon Seo, Balasubramanian S. Haran | 2016-02-09 |
| 9257536 | FinFET with crystalline insulator | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan | 2016-02-09 |
| 9257527 | Nanowire transistor structures with merged source/drain regions using auxiliary pillars | Pouya Hashemi, Ali Khakifirooz | 2016-02-09 |
| 9252016 | Stacked nanowire | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-02-02 |
| 9252017 | Stacked nanowire | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-02-02 |
| 9246003 | FINFET structures with fins recessed beneath the gate | Kangguo Cheng, Eric C. Harley, Yue Ke, Ali Khakifirooz | 2016-01-26 |
| 9236463 | Compressive strained III-V complementary metal oxide semiconductor (CMOS) device | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-01-12 |
| 9236397 | FinFET device containing a composite spacer structure | Judson R. Holt, Jinghong Li, Sanjay C. Mehta, Dominic J. Schepis | 2016-01-12 |
| 9230992 | Semiconductor device including gate channel having adjusted threshold voltage | Pranita Kerber, Qiqing C. Ouyang | 2016-01-05 |