Issued Patents 2016
Showing 126–150 of 175 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9343550 | Silicon-on-nothing FinFETs | Kangguo Cheng, Ali Khakifirooz, Dominic J. Schepis | 2016-05-17 |
| 9343529 | Method of formation of germanium nanowires on bulk substrates | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2016-05-17 |
| 9337335 | Structure and method to form localized strain relaxed SiGe buffer layer | Shogo Mochizuki | 2016-05-10 |
| 9337196 | III-V FinFET CMOS with III-V and germanium-containing channel closely spaced | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2016-05-10 |
| 9330908 | Semiconductor structure with aspect ratio trapping capabilities | Thomas N. Adam, Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2016-05-03 |
| 9331201 | Multi-height FinFETs with coplanar topography background | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-05-03 |
| 9324867 | Method to controllably etch silicon recess for ultra shallow junctions | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-04-26 |
| 9324843 | High germanium content silicon germanium fins | Karthik Balakrishnan, John Bruley, Pouya Hashemi, Ali Khakifirooz, John A. Ott | 2016-04-26 |
| 9324797 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-04-26 |
| 9324796 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-04-26 |
| 9324795 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-04-26 |
| 9318347 | Wafer backside particle mitigation | Marc A. Bergendahl, James J. Demarest, Alex Richard Hubbard, Richard C. Johnson, Ryan O. Jung +3 more | 2016-04-19 |
| 9318608 | Uniform junction formation in FinFETs | Eric C. Harley, Judson R. Holt, Yue Ke, Timothy J. McArdle, Shogo Mochizuki | 2016-04-19 |
| 9318553 | Nanowire device with improved epitaxy | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2016-04-19 |
| 9312128 | Compound semiconductor integrated circuit and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-04-12 |
| 9312360 | FinFET with epitaxial source and drain regions and dielectric isolated channel region | Kangguo Cheng, Ramachandra Divakaruni, Ali Khakifirooz, Soon-Cheon Seo | 2016-04-12 |
| 9312273 | Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan | 2016-04-12 |
| 9312173 | Self-limiting silicide in highly scaled fin technology | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-04-12 |
| 9305883 | Locally raised epitaxy for improved contact by local silicon capping during trench silicide processings | Sebastian Naczas, Vamsi K. Paruchuri, Dominic J. Schepis | 2016-04-05 |
| 9305781 | Structure and method to form localized strain relaxed SiGe buffer layer | Shogo Mochizuki | 2016-04-05 |
| 9299706 | Single source/drain epitaxy for co-integrating nFET semiconductor fins and pFET semiconductor fins | Hemanth Jagannathan | 2016-03-29 |
| 9299837 | Integrated circuit having MOSFET with embedded stressor and method to fabricate same | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2016-03-29 |
| 9299787 | Forming IV fins and III-V fins on insulator | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-03-29 |
| 9299777 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-03-29 |
| 9299618 | Structure and method for advanced bulk fin isolation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Kern Rim | 2016-03-29 |