| 9520496 |
Charge carrier transport facilitated by strain |
Anirban Basu |
2016-12-13 |
| 9502562 |
Fin field effect transistor including self-aligned raised active regions |
Anirban Basu, Amlan Majumdar |
2016-11-22 |
| 9484463 |
Fabrication process for mitigating external resistance of a multigate device |
Anirban Basu, Amlan Majumdar |
2016-11-01 |
| 9472667 |
III-V MOSFET with strained channel and semi-insulating bottom barrier |
Anirban Basu, Amlan Majumdar |
2016-10-18 |
| 9472658 |
III-V nanowire FET with compositionally-graded channel and wide-bandgap core |
Anirban Basu, Amlan Majumdar, Jeffrey W. Sleight |
2016-10-18 |
| 9449820 |
Epitaxial growth techniques for reducing nanowire dimension and pitch |
Michael A. Guillorn, Isaac Lauer, Jeffrey W. Sleight |
2016-09-20 |
| 9443102 |
Protecting content displayed on a mobile device |
Lior Horesh, Raya Horesh, Marco Pistoia |
2016-09-13 |
| 9431494 |
Low interfacial defect field effect transistor |
Anirban Basu, Amlan Majumdar |
2016-08-30 |
| 9431520 |
Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates |
Christos D. Dimitrakopoulos, Alfred Grill |
2016-08-30 |
| 9417714 |
RFID-based input device |
— |
2016-08-16 |
| 9405346 |
Managing access to data on a client device during low-power state |
Gregory J. Boss, James R. Kozloski, Clifford A. Pickover, Anne R. Sand |
2016-08-02 |
| 9406530 |
Techniques for fabricating reduced-line-edge-roughness trenches for aspect ratio trapping |
Katherine L. Saenger, Kuen-Ting Shiu |
2016-08-02 |
| 9397195 |
Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates |
Christos D. Dimitrakopoulos, Alfred Grill |
2016-07-19 |
| 9390980 |
III-V compound and germanium compound nanowire suspension with germanium-containing release layer |
Isaac Lauer, Alexander Reznicek, Jeffrey W. Sleight |
2016-07-12 |
| 9368574 |
Nanowire field effect transistor with inner and outer gates |
Anirban Basu, Amlan Majumdar, Jeffrey W. Sleight |
2016-06-14 |
| 9349591 |
Crystal formation on non-lattice matched substrates |
Cheng-Wei Cheng, Devendra K. Sadana, Brent A. Wacaser |
2016-05-24 |
| 9343142 |
Nanowire floating gate transistor |
Sarunya Bangsaruntip, Amlan Majumdar, Jeffrey W. Sleight |
2016-05-17 |
| 9337264 |
Process for forming a surrounding gate for a nanowire using a sacrificial patternable dielectric |
Sarunya Bangsaruntip, Michael A. Guillorn |
2016-05-10 |
| 9329033 |
Method for estimating and correcting misregistration target inaccuracy |
Eran Amit, Dana Klein, Amir Widmann, Nimrod Shuall, Amnon Manassen +1 more |
2016-05-03 |
| 9318561 |
Device isolation for III-V substrates |
Anirban Basu |
2016-04-19 |
| 9287360 |
III-V nanowire FET with compositionally-graded channel and wide-bandgap core |
Anirban Basu, Amlan Majumdar, Jeffrey W. Sleight |
2016-03-15 |
| 9263260 |
Nanowire field effect transistor with inner and outer gates |
Anirban Basu, Amlan Majumdar, Jeffrey W. Sleight |
2016-02-16 |
| 9264182 |
Iterative receiver loop |
Mor Miller, Amit Steinberg, Daniel Wajcer, Dan Peleg |
2016-02-16 |
| 9263292 |
Processing for overcoming extreme topography |
Steven A. Cordes, Sherif A. Goma, Joanna Rosner, Jeannine M. Trewhella |
2016-02-16 |
