Issued Patents 2016
Showing 51–75 of 185 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9431265 | Fin cut for tight fin pitch by two different sit hard mask materials on fin | Kangguo Cheng, Alexander Reznicek, Tenko Yamashita | 2016-08-30 |
| 9431306 | Methods of forming fin isolation regions on FinFET semiconductor devices using an oxidation-blocking layer of material and by performing a fin-trimming process | Ajey Poovannummoottil Jacob, Bruce B. Doris, Kangguo Cheng, Kern Rim | 2016-08-30 |
| 9425319 | Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same | Xiuyu Cai, Ruilong Xie, Kangguo Cheng | 2016-08-23 |
| 9425080 | Non-volatile memory device employing semiconductor nanoparticles | Kangguo Cheng, Robert H. Dennard, Hemanth Jagannathan, Tak H. Ning, Ghavam G. Shahidi | 2016-08-23 |
| 9418841 | Type III-V and type IV semiconductor device formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-08-16 |
| 9419074 | Non-planar semiconductor device with aspect ratio trapping | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-08-16 |
| 9419078 | Floating body memory with asymmetric channel | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-08-16 |
| 9412740 | Integrated circuit product with a gate height registration structure | Ruilong Xie, Michael Wedlake, Xiuyu Cai, Kangguo Cheng | 2016-08-09 |
| 9412822 | Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device | Xiuyu Cai, Ruilong Xie, Kangguo Cheng, Ajey Poovannummoottil Jacob, Witold P. Maszara | 2016-08-09 |
| 9406545 | Bulk semiconductor fins with self-aligned shallow trench isolation structures | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2016-08-02 |
| 9406682 | Method and structure for preventing epi merging in embedded dynamic random access memory | Veeraraghavan S. Basker, Kangguo Cheng | 2016-08-02 |
| 9406529 | Formation of FinFET junction | Kevin K. Chan, Pouya Hashemi, John A. Ott, Alexander Reznicek | 2016-08-02 |
| 9406506 | Lattice matched aspect ratio trapping to reduce defects in III-V layer directly grown on silicon | Keith E. Fogel, Pouya Hashemi, Alexander Reznicek | 2016-08-02 |
| 9401373 | Multi-fin finFETs with merged-fin source/drains and replacement gates | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2016-07-26 |
| 9401311 | Self aligned structure and method for high-K metal gate work function tuning | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-07-26 |
| 9401334 | Preventing unauthorized use of integrated circuits for radiation-hard applications | Kangguo Cheng, Bruce B. Doris, Kenneth P. Rodbell | 2016-07-26 |
| 9401372 | Dual isolation on SSOI wafer | Bruce B. Doris, Hong He, Junli Wang | 2016-07-26 |
| 9397094 | Semiconductor structure with an L-shaped bottom plate | Kangguo Cheng, Wilfried E. Haensch, Davood Shahrjerdi | 2016-07-19 |
| 9391091 | MOSFET with work function adjusted metal backgate | Kangguo Cheng, Bruce B. Doris, Pranita Kerber | 2016-07-12 |
| 9391077 | SiGe and Si FinFET structures and methods for making the same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-07-12 |
| 9390925 | Silicon—germanium (SiGe) fin formation | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2016-07-12 |
| 9390939 | Methods of forming MIS contact structures for semiconductor devices and the resulting devices | Ruilong Xie, Xiuyu Cai, Kangguo Cheng | 2016-07-12 |
| 9391069 | MIM capacitor with enhanced capacitance formed by selective epitaxy | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek, Raghavasimhan Sreenivasan | 2016-07-12 |
| 9385023 | Method and structure to make fins with different fin heights and no topography | Kangguo Cheng, Joel P. de Souza, Alexander Reznicek, Dominic J. Schepis | 2016-07-05 |
| 9385231 | Device structure with increased contact area and reduced gate capacitance | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2016-07-05 |