Issued Patents 2016
Showing 76–100 of 185 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9379218 | Fin formation in fin field effect transistors | Kangguo Cheng, Bruce B. Doris, Hong He, Yunpeng Yin | 2016-06-28 |
| 9379204 | Lattice matched aspect ratio trapping to reduce defects in III-V layer directly grown on silicon | Keith E. Fogel, Pouya Hashemi, Alexander Reznicek | 2016-06-28 |
| 9379135 | FinFET semiconductor device having increased gate height control | Kangguo Cheng, Shom Ponoth, Raghavasimhan Sreenivasan | 2016-06-28 |
| 9379111 | Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-06-28 |
| 9379028 | SOI CMOS structure having programmable floating backplate | Jin Cai, Robert H. Dennard, Tak H. Ning, Jeng-Bang Yau | 2016-06-28 |
| 9379025 | Method of forming source/drain contacts in unmerged FinFETs | Veeraraghavan S. Basker, Kangguo Cheng | 2016-06-28 |
| 9378948 | FinFET structures having silicon germanium and silicon fins | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-06-28 |
| 9378972 | Integration of dense and variable pitch fin structures | Kangguo Cheng, Matthew E. Colburn, Bruce B. Doris | 2016-06-28 |
| 9379243 | Field-effect transistor with aggressively strained fins | Pouya Hashemi, Alexander Reznicek | 2016-06-28 |
| 9373639 | Thin channel-on-insulator MOSFET device with n+ epitaxy substrate and embedded stressor | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-06-21 |
| 9373743 | Silicon heterojunction photovoltaic device with wide band gap emitter | Bahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi | 2016-06-21 |
| 9373637 | Epitaxial semiconductor resistor with semiconductor structures on same substrate | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2016-06-21 |
| 9373691 | Transistor with bonded gate dielectric | Bahman Hekmatshoartabari, Ghavam G. Shahidi, Davood Shahrjerdi | 2016-06-21 |
| 9373507 | Defective P-N junction for backgated fully depleted silicon on insulator mosfet | Kangguo Cheng, Bruce B. Doris, Laurent Grenouillet, Yannick Le Tiec, Qing Liu +1 more | 2016-06-21 |
| 9368492 | Forming fins of different materials on the same substrate | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2016-06-14 |
| 9362310 | Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Hong He, Alexander Reznicek | 2016-06-07 |
| 9362170 | Dielectric liner for a self-aligned contact via structure | Veeraraghavan S. Basker, Kangguo Cheng | 2016-06-07 |
| 9362182 | Forming strained fins of different material on a substrate | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-06-07 |
| 9362285 | Structure and method to increase contact area in unmerged EPI integration for CMOS FinFETs | Veeraraghavan S. Basker, Kangguo Cheng | 2016-06-07 |
| 9362309 | FinFET and method of fabrication | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2016-06-07 |
| 9362362 | FinFET with dielectric isolated channel | Kangguo Cheng, Alexander Reznicek, Soon-Cheon Seo | 2016-06-07 |
| 9362400 | Semiconductor device including dielectrically isolated finFETs and buried stressor | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2016-06-07 |
| 9356019 | Integrated circuit with on chip planar diode and CMOS devices | Kangguo Cheng, Pranita Kerber, Ghavam G. Shahidi | 2016-05-31 |
| 9356119 | MOSFETs with reduced contact resistance | Bruce B. Doris, Kangguo Cheng, Pranita Kerber | 2016-05-31 |
| 9356046 | Structure and method for forming CMOS with NFET and PFET having different channel materials | Kangguo Cheng, Bruce B. Doris, Steven J. Holmes | 2016-05-31 |