Issued Patents 2016
Showing 126–150 of 185 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9318580 | U-shaped semiconductor structure | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi | 2016-04-19 |
| 9318553 | Nanowire device with improved epitaxy | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-04-19 |
| 9318384 | Dielectric liner for a self-aligned contact via structure | Veeraraghavan S. Basker, Kangguo Cheng | 2016-04-19 |
| 9312128 | Compound semiconductor integrated circuit and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-04-12 |
| 9312383 | Self-aligned contacts for vertical field effect transistors | Kangguo Cheng, Wilfried E. Haensch, Davood Shahrjerdi | 2016-04-12 |
| 9312367 | FinFET with a silicon germanium alloy channel and method of fabrication thereof | Kangguo Cheng, Bruce B. Doris, Hong He | 2016-04-12 |
| 9312360 | FinFET with epitaxial source and drain regions and dielectric isolated channel region | Kangguo Cheng, Ramachandra Divakaruni, Alexander Reznicek, Soon-Cheon Seo | 2016-04-12 |
| 9312275 | FinFET with reduced capacitance | Veeraraghavan S. Basker, Kangguo Cheng, Charles W. Koburger, III | 2016-04-12 |
| 9312273 | Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek, Raghavasimhan Sreenivasan | 2016-04-12 |
| 9312173 | Self-limiting silicide in highly scaled fin technology | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-04-12 |
| 9305846 | Device isolation in FinFET CMOS | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Steven Bentley, Toshiharu Nagumo, Kangguo Cheng +1 more | 2016-04-05 |
| 9299703 | CMOS transistors with identical active semiconductor region shapes | Veeraraghavan S. Basker, Kangguo Cheng | 2016-03-29 |
| 9299837 | Integrated circuit having MOSFET with embedded stressor and method to fabricate same | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-03-29 |
| 9299787 | Forming IV fins and III-V fins on insulator | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-03-29 |
| 9299777 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-03-29 |
| 9299719 | CMOS with dual raised source and drain for NMOS and PMOS | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran | 2016-03-29 |
| 9299618 | Structure and method for advanced bulk fin isolation | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2016-03-29 |
| 9293373 | Method for fabricating CMOS finFETs with dual channel material | Kangguo Cheng, Alexander Reznicek, Pouya Hashemi | 2016-03-22 |
| 9293588 | FinFET with a silicon germanium alloy channel and method of fabrication thereof | Kangguo Cheng, Bruce B. Doris, Hong He | 2016-03-22 |
| 9293583 | Finfet with oxidation-induced stress | Kangguo Cheng, Bruce B. Doris, Kern Rim | 2016-03-22 |
| 9293576 | Semiconductor device with low-k gate cap and self-aligned contact | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2016-03-22 |
| 9293532 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-03-22 |
| 9293530 | High aspect ratio trapping semiconductor with uniform height and isolated from bulk substrate | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-03-22 |
| 9293474 | Dual channel hybrid semiconductor-on-insulator semiconductor devices | Kangguo Cheng, Bruce B. Doris, Qing Liu, Laurent Grenouillet, Yannick Le Tiec +1 more | 2016-03-22 |
| 9293463 | CMOS transistors including gate spacers of the same thickness | Veeraraghavan S. Basker, Kangguo Cheng | 2016-03-22 |