Issued Patents 2016
Showing 176–185 of 185 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9246003 | FINFET structures with fins recessed beneath the gate | Kangguo Cheng, Eric C. Harley, Yue Ke, Alexander Reznicek | 2016-01-26 |
| 9245981 | Dielectric filler fins for planar topography in gate level | Kangguo Cheng, Ramachandra Divakaruni, Bruce B. Doris, Edward J. Nowak, Kern Rim | 2016-01-26 |
| 9245807 | Integrated circuit with a thin body field effect transistor and capacitor | Kangguo Cheng, Bruce B. Doris, Ghavam G. Shahidi | 2016-01-26 |
| 9240447 | finFETs containing improved strain benefit and self aligned trench isolation structures | Kangguo Cheng, Johnathan E. Faltermeier | 2016-01-19 |
| 9240497 | Junction field effect transistor with an epitaxially grown gate structure | Tak H. Ning, Kangguo Cheng, Pranita Kerber | 2016-01-19 |
| 9240355 | On-chip diode with fully depleted semicondutor devices | Kangguo Cheng, Ghavam G. Shahidi, Davood Shahrjerdi | 2016-01-19 |
| 9236389 | Embedded flash memory fabricated in standard CMOS process with self-aligned contact | Kangguo Cheng, Ramachandra Divakaruni, Subramanian S. Iyer | 2016-01-12 |
| 9236480 | Methods of forming finFET semiconductor devices using a replacement gate technique and the resulting devices | Ruilong Xie, Xiuyu Cai, Kangguo Cheng | 2016-01-12 |
| 9236463 | Compressive strained III-V complementary metal oxide semiconductor (CMOS) device | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-01-12 |
| 9236447 | Asymmetric spacers | Kangguo Cheng, Richard S. Wise | 2016-01-12 |