Issued Patents 2016
Showing 151–175 of 185 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9293459 | Method and structure for improving finFET with epitaxy source/drain | Kangguo Cheng, Alexander Reznicek, Tenko Yamashita | 2016-03-22 |
| 9287358 | Stressed nanowire stack for field effect transistor | Martin M. Frank, Pouya Hashemi, Alexander Reznicek | 2016-03-15 |
| 9281247 | Strained silicon and strained silicon germanium on insulator field-effect transistor | Stephen W. Bedell, Kangguo Cheng, Bruce B. Doris, Devendra K. Sadana | 2016-03-08 |
| 9281381 | Forming strained and relaxed silicon and silicon germanium fins on the same wafer | Veeraraghavan S. Basker, Bruce B. Doris, Tenko Yamashita, Chun-Chen Yeh | 2016-03-08 |
| 9281198 | Method of fabricating a semiconductor device including embedded crystalline back-gate bias planes | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek, Raghavasimhan Sreenivasan | 2016-03-08 |
| 9276002 | Integrated circuit structure with bulk silicon FinFET | Kangguo Cheng, Qizhi Liu, Edward J. Nowak, Jed H. Rankin | 2016-03-01 |
| 9276113 | Structure and method to make strained FinFET with improved junction capacitance and low leakage | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2016-03-01 |
| 9275854 | Compound semiconductor integrated circuit and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-03-01 |
| 9269575 | Trench sidewall protection for selective epitaxial semiconductor material formation | Kangguo Cheng, Bruce B. Doris, Hong He | 2016-02-23 |
| 9269815 | FinFET semiconductor device with a recessed liner that defines a fin height of the FinFet device | Xiuyu Cai, Ruilong Xie, Kangguo Cheng | 2016-02-23 |
| 9269629 | Dummy fin formation by gas cluster ion beam | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2016-02-23 |
| 9269627 | Fin cut on SIT level | Kangguo Cheng, Alexander Reznicek, Tenko Yamashita | 2016-02-23 |
| 9269589 | Dense finFET SRAM | Kangguo Cheng, Bruce B. Doris, Ghavam G. Shahidi | 2016-02-23 |
| 9263449 | FinFET and fin-passive devices | Kangguo Cheng, Ramachandra Divakaruni, Theodorus E. Standaert | 2016-02-16 |
| 9263616 | Selective emitter photovoltaic device | Bahman Hekmatshoartabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi | 2016-02-16 |
| 9263584 | Field effect transistors employing a thin channel region on a crystalline insulator structure | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-02-16 |
| 9263466 | CMOS with dual raised source and drain for NMOS and PMOS | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran | 2016-02-16 |
| 9263465 | CMOS with dual raised source and drain for NMOS and PMOS | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran | 2016-02-16 |
| 9263453 | Secondary use of aspect ratio trapping holes as eDRAM structure | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-02-16 |
| 9257536 | FinFET with crystalline insulator | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek, Raghavasimhan Sreenivasan | 2016-02-09 |
| 9257527 | Nanowire transistor structures with merged source/drain regions using auxiliary pillars | Pouya Hashemi, Alexander Reznicek | 2016-02-09 |
| 9252016 | Stacked nanowire | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-02-02 |
| 9252017 | Stacked nanowire | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-02-02 |
| 9252014 | Trench sidewall protection for selective epitaxial semiconductor material formation | Kangguo Cheng, Bruce B. Doris, Hong He | 2016-02-02 |
| 9245903 | High voltage metal oxide semiconductor field effect transistor integrated into extremely thin semiconductor on insulator process | Kangguo Cheng, Bruce B. Doris, Ghavam G. Shahidi | 2016-01-26 |