Issued Patents 2016
Showing 26–50 of 185 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9472575 | Formation of strained fins in a finFET device | Pouya Hashemi, Alexander Reznicek | 2016-10-18 |
| 9472558 | Semiconductor structures with stacked non-planar field effect transistors and methods of forming the structures | Kangguo Cheng, Carl Radens, Robert C. Wong | 2016-10-18 |
| 9472576 | Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek, Raghavasimhan Sreenivasan | 2016-10-18 |
| 9472446 | Methods of forming a FinFET semiconductor device with a unique gate configuration, and the resulting FinFET device | Ruilong Xie, Xiuyu Cai, Kangguo Cheng | 2016-10-18 |
| 9472460 | Uniform depth fin trench formation | Alexander Reznicek, Kangguo Cheng, Dominic J. Schepis, Pouya Hashemi | 2016-10-18 |
| 9472621 | CMOS structures with selective tensile strained NFET fins and relaxed PFET fins | Bruce B. Doris, Hong He, Joshua M. Rubin | 2016-10-18 |
| 9472470 | Methods of forming FinFET with wide unmerged source drain EPI | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2016-10-18 |
| 9472631 | Flexible active matrix circuits for interfacing with biological tissue | Bahman Hekmatshoartabari, Ghavam G. Shahidi, Davood Shahrjerdi | 2016-10-18 |
| 9466567 | Nanowire compatible E-fuse | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-10-11 |
| 9461169 | Device and method for fabricating thin semiconductor channel and buried strain memorization layer | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni, Ghavam G. Shahidi | 2016-10-04 |
| 9455330 | Recessing RMG metal gate stack for forming self-aligned contact | Xiuyu Cai, Kangguo Cheng, Ruilong Xie | 2016-09-27 |
| 9455336 | SiGe and Si FinFET structures and methods for making the same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-09-27 |
| 9455331 | Method and structure of forming controllable unmerged epitaxial material | Xiuyu Cai, Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2016-09-27 |
| 9455250 | Distributed decoupling capacitor | Kangguo Cheng, Darsen D. Lu, Ghavam G. Shahidi | 2016-09-27 |
| 9455323 | Under-spacer doping in fin-based semiconductor devices | Veeraraghavan S. Basker, Kangguo Cheng, Charles W. Koburger, III | 2016-09-27 |
| 9455141 | Silicon-germanium fin of height above critical thickness | Kanggou Cheng, Alexander Reznicek, Dominic J. Schepis | 2016-09-27 |
| 9455274 | Replacement fin process in SSOI wafer | Bruce B. Doris, Hong He, Junli Wang | 2016-09-27 |
| 9450079 | FinFET having highly doped source and drain regions | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2016-09-20 |
| 9443948 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-09-13 |
| 9437679 | Semi-conductor device with epitaxial source/drain facetting provided at the gate edge | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-09-06 |
| 9437680 | Silicon-on-insulator substrates having selectively formed strained and relaxed device regions | Kangguo Cheng, Bruce B. Doris, Devendra K. Sadana | 2016-09-06 |
| 9437675 | eDRAM for planar III-V semiconductor devices | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-09-06 |
| 9437502 | Method to form stacked germanium nanowires and stacked III-V nanowires | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-09-06 |
| 9431296 | Structure and method to form liner silicide with improved contact resistance and reliablity | Veeraraghavan S. Basker, Kangguo Cheng | 2016-08-30 |
| 9431306 | Methods of forming fin isolation regions on FinFET semiconductor devices using an oxidation-blocking layer of material and by performing a fin-trimming process | Ajey Poovannummoottil Jacob, Bruce B. Doris, Kangguo Cheng, Kern Rim | 2016-08-30 |