TY

Tenko Yamashita

IBM: 66 patents #11 of 10,295Top 1%
Globalfoundries: 26 patents #11 of 2,145Top 1%
KT Kabushiki Kaisha Toshiba: 1 patents #1,177 of 2,918Top 45%
SS Stmicroelectronics Sa: 1 patents #64 of 162Top 40%
📍 Schenectady, NY: #2 of 133 inventorsTop 2%
🗺 New York: #7 of 11,723 inventorsTop 1%
Overall (2016): #56 of 481,213Top 1%
83
Patents 2016

Issued Patents 2016

Showing 51–75 of 83 patents

Patent #TitleCo-InventorsDate
9373697 Spacer replacement for replacement metal gate semiconductor devices Sanjay C. Mehta, Shom Ponoth, Muthumanickam Sankarapandian, Theodorus E. Standaert 2016-06-21
9373550 Selectively degrading current resistance of field effect transistor devices Veeraraghavan S. Basker, Effendi Leobandung, Dieter Wendel 2016-06-21
9368350 Tone inverted directed self-assembly (DSA) fin patterning Hong He, Chi-Chun Liu, Alexander Reznicek, Chiahsun Tseng 2016-06-14
9368591 Transistors comprising doped region-gap-doped region structures and methods of fabrication Steven Bentley, Ajey Poovannummoottil Jacob, Chia-Yu Chen 2016-06-14
9368569 Punch through stopper for semiconductor device Effendi Leobandung 2016-06-14
9368343 Reduced external resistance finFET device Kangguo Cheng, Shom Ponoth, Raghavasimhan Sreenivasan, Theodorus E. Standaert 2016-06-14
9362177 Nanowire semiconductor device Wilfried Haensch, Effendi Leobandung 2016-06-07
9362407 Symmetrical extension junction formation with low-K spacer and dual epitaxial process in FinFET device Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh 2016-06-07
9355921 Test macro for use with a multi-patterning lithography process Chun-Chen Yeh, Jin Cho, Hui Zang 2016-05-31
9349838 Semiconductor structure with deep trench thermal conduction Kangguo Cheng, Balasubramanian Pranatharthi Haran, Junjun Li, Shom Ponoth, Theodorus E. Standaert 2016-05-24
9349863 Anchored stress-generating active semiconductor regions for semiconductor-on-insulator finfet Veeraraghavan S. Basker, Krishna Iyengar, Chun-Chen Yeh 2016-05-24
9337317 Semiconductor device including finFET and diode having reduced defects in depletion region Veeraraghavan S. Basker 2016-05-10
9331177 Semiconductor structure with deep trench thermal conduction Kangguo Cheng, Balasubramanian Pranatharthi Haran, Junjun Li, Shom Ponoth, Theodorus E. Standaert 2016-05-03
9331146 Silicon nanowire formation in replacement metal gate process Chia-Yu Chen, Zuoguang Liu 2016-05-03
9330984 CMOS fin integration on SOI substrate Effendi Leobandung 2016-05-03
9324842 Buried local interconnect in finfet structure and method of fabricating same Hui Zang, Chun-Chen Yeh, Veeraraghavan S. Basker 2016-04-26
9312143 Formation of isolation surrounding well implantation Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert 2016-04-12
9312136 Replacement metal gate stack for diffusion prevention Takashi Ando, Johnathan E. Faltermeier, Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok 2016-04-12
9293464 Structure to enhance gate induced strain effect in multigate devices Veeraraghavan S. Basker, Pranita Kerber, Junli Wang, Chun-Chen Yeh 2016-03-22
9293459 Method and structure for improving finFET with epitaxy source/drain Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2016-03-22
9281303 Electrostatic discharge devices and methods of manufacture Huiming Bu, Junjun Li, Theodorus E. Standaert 2016-03-08
9281381 Forming strained and relaxed silicon and silicon germanium fins on the same wafer Veeraraghavan S. Basker, Bruce B. Doris, Ali Khakifirooz, Chun-Chen Yeh 2016-03-08
9275911 Hybrid orientation fin field effect transistor and planar field effect transistor Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert 2016-03-01
9269627 Fin cut on SIT level Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2016-02-23
9269792 Method and structure for robust finFET replacement metal gate integration Kangguo Cheng, Shom Ponoth, Raghavasimhan Sreenivasan, Theodorus E. Standaert 2016-02-23