Issued Patents All Time
Showing 126–150 of 233 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10497711 | Non-volatile memory with reduced program speed variation | Ashish Baraskar, Liang Pang, Yanli Zhang, Yingda Dong | 2019-12-03 |
| 10468596 | Damascene process for forming three-dimensional cross rail phase change memory devices | Senaka Kanakamedala, Yao-Sheng Lee | 2019-11-05 |
| 10461163 | Three-dimensional memory device with thickened word lines in terrace region and method of making thereof | Senaka Kanakamedala, Yoshihiro Kanno, Yanli Zhang, Jin Liu, Murshed Chowdhury +1 more | 2019-10-29 |
| 10453854 | Three-dimensional memory device with thickened word lines in terrace region | Yoshihiro Kanno, Senaka Kanakamedala, Yanli Zhang, Jin Liu, Murshed Chowdhury | 2019-10-22 |
| 10438964 | Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereof | Senaka Kanakamedala, Yanli Zhang, Yao-Sheng Lee | 2019-10-08 |
| 10381559 | Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same | Fei Zhou, Christopher J. Petti, Rahul Sharangpani, Adarsh Rajashekhar, Seung-Yeul Yang | 2019-08-13 |
| 10381409 | Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same | Fei Zhou, Christopher J. Petti, Rahul Sharangpani, Adarsh Rajashekhar, Seung-Yeul Yang | 2019-08-13 |
| 10381364 | Three-dimensional memory device including vertically offset drain select level layers and method of making thereof | Fei Zhou, Rahul Sharangpani, Yanli Zhang, Senaka Kanakamedala | 2019-08-13 |
| 10361213 | Three dimensional memory device containing multilayer wordline barrier films and method of making thereof | Rahul Sharangpani, Fumitaka Amano, Fei Zhou, Keerti Shukla | 2019-07-23 |
| 10355139 | Three-dimensional memory device with amorphous barrier layer and method of making thereof | Rahul Sharangpani, Keerti Shukla, Fei Zhou, Somesh Peri | 2019-07-16 |
| 10355012 | Multi-tier three-dimensional memory device with stress compensation structures and method of making thereof | Seiji Shimabukuro | 2019-07-16 |
| 10290652 | Three-dimensional memory device with graded word lines and methods of making the same | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar | 2019-05-14 |
| 10290648 | Three-dimensional memory device containing air gap rails and method of making thereof | Fei Zhou, Rahul Sharangpani, Adarsh Rajashekhar | 2019-05-14 |
| 10283513 | Three-dimensional memory device with annular blocking dielectrics and method of making thereof | Fei Zhou, Rahul Sharangpani, Adarsh Rajashekhar | 2019-05-07 |
| 10276583 | Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof | Rahul Sharangpani, Fumitaka Amano, Adarsh Rajashekhar, Fei Zhou | 2019-04-30 |
| 10262945 | Three-dimensional array device having a metal containing barrier and method of making thereof | Murshed Chowdhury, Keerti Shukla, Tomohisa Abe, Yao-Sheng Lee, James Kai | 2019-04-16 |
| 10256247 | Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereof | Senaka Kanakamedala, Yao-Sheng Lee | 2019-04-09 |
| 10224104 | Three dimensional NAND memory device with common bit line for multiple NAND strings in each memory block | Murshed Chowdhury, Jin Liu, Yanli Zhang, Andrew Lin, Johann Alsmeier | 2019-03-05 |
| 10217746 | Three-dimensional memory device having L-shaped word lines and a support structure and methods of making the same | Tae Kyung Kim, Yanli Zhang, Hiroyuki Kinoshita, Daxin Mao, Jixin Yu +5 more | 2019-02-26 |
| 10199434 | Three-dimensional cross rail phase change memory device and method of manufacturing the same | Yao-Sheng Lee, Senaka Kanakamedala | 2019-02-05 |
| 10128261 | Cobalt-containing conductive layers for control gate electrodes in a memory structure | Rahul Sharangpani, Sateesh Koka, Genta Mizuno, Naoki Takeguchi, Senaka Kanakamedala +3 more | 2018-11-13 |
| 10115730 | Three-dimensional memory device containing structurally reinforced pedestal channel portions and method of making thereof | Ashish Baraskar, Naohiro Hosoda, Yanli Zhang, Hiroyuki Tanaka, Ryo Nakamura +1 more | 2018-10-30 |
| 10103169 | Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch process | Chun Ge, Fei Zhou, Yanli Zhang, Takashi Orimoto | 2018-10-16 |
| 10083982 | Three-dimensional memory device having select gate electrode that is thicker than word lines and method of making thereof | Keisuke SHIGEMURA, Junichi Ariyoshi, Masanori Tsutsumi, Michiaki Sano, Yanli Zhang | 2018-09-25 |
| 10050054 | Three-dimensional memory device having drain select level isolation structure and method of making thereof | Yanli Zhang, Johann Alsmeier, Senaka Kanakamedala, Rahul Sharangpani, James Kai | 2018-08-14 |