Issued Patents All Time
Showing 101–125 of 233 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10950629 | Three-dimensional flat NAND memory device having high mobility channels and methods of making the same | Fei Zhou, Senaka Kanakamedala, Yao-Sheng Lee | 2021-03-16 |
| 10937809 | Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof | Rahul Sharangpani, Seung-Yeul Yang, Fei Zhou, Adarsh Rajashekhar | 2021-03-02 |
| 10916504 | Three-dimensional memory device including electrically conductive layers with molybdenum-containing liners | Yusuke Mukae, Naoki Takeguchi, Kensuke Yamaguchi, Yujin Terasawa | 2021-02-09 |
| 10910272 | Reusable support substrate for formation and transfer of semiconductor devices and methods of using the same | Fei Zhou, Senaka Kanakamedala | 2021-02-02 |
| 10868025 | Three-dimensional memory device including replacement crystalline channels and methods of making the same | Fei Zhou, Adarsh Rajashekhar, Rahul Sharangpani | 2020-12-15 |
| 10847408 | Warpage-compensated bonded structure including a support chip and a three-dimensional memory chip | Senaka Kanakamedala, Yao-Sheng Lee, Jian Chen | 2020-11-24 |
| 10840259 | Three-dimensional memory device including liner free molybdenum word lines and methods of making the same | Peter Rabkin, Masaaki Higashitani | 2020-11-17 |
| 10818542 | Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the same | Zhixin Cui, Fei Zhou | 2020-10-27 |
| 10811431 | Ferroelectric memory device containing word lines and pass gates and method of forming the same | Yanli Zhang | 2020-10-20 |
| 10804282 | Three-dimensional memory devices using carbon-doped aluminum oxide backside blocking dielectric layer for etch resistivity enhancement and methods of making the same | Ashish Baraskar, Fei Zhou, Ching-Huang Lu | 2020-10-13 |
| 10804291 | Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same | Adarsh Rajashekhar, Fei Zhou, Rahul Sharangpani | 2020-10-13 |
| 10797060 | Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same | Rahul Sharangpani, Adarsh Rajashekhar, Fei Zhou, Srikanth Ranganathan, Akio Nishida +1 more | 2020-10-06 |
| 10797061 | Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same | Akio Nishida, Toshihiro Iizuka, Rahul Sharangpani, Adarsh Rajashekhar, Fei Zhou +1 more | 2020-10-06 |
| 10790300 | Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same | Adarsh Rajashekhar, Fei Zhou, Rahul Sharangpani | 2020-09-29 |
| 10756110 | Method of forming seamless drain-select-level electrodes for a three-dimensional memory device and structures formed by the same | Rahul Sharangpani, Adarsh Rajashekhar, Fei Zhou | 2020-08-25 |
| 10748925 | Three-dimensional memory device containing channels with laterally pegged dielectric cores | Masanori Tsutsumi, Manabu Kakazu, Senaka Kanakamedala | 2020-08-18 |
| 10741572 | Three-dimensional memory device having multilayer word lines containing selectively grown cobalt or ruthenium and method of making the same | Rahul Sharangpani, Yanli Zhang, Yao-Sheng Lee | 2020-08-11 |
| 10707233 | Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the same | Zhixin Cui, Fei Zhou | 2020-07-07 |
| 10700086 | Three-dimensional flat NAND memory device having high mobility channels and methods of making the same | Fei Zhou, Senaka Kanakamedala, Yao-Sheng Lee | 2020-06-30 |
| 10665581 | Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same | Fei Zhou, Adarsh Rajashekhar, Rahul Sharangpani | 2020-05-26 |
| 10651196 | Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making same | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar | 2020-05-12 |
| 10622369 | Three-dimensional memory device including contact via structures that extend through word lines and method of making the same | Fei Zhou, Hiroyuki Kinoshita, Yanli Zhang, James Kai, Johann Alsmeier +2 more | 2020-04-14 |
| 10622368 | Three-dimensional memory device with semicircular metal-semiconductor alloy floating gate electrodes and methods of making thereof | Senaka Kanakamedala, Rahul Sharangpani, Somesh Peri, Yao-Sheng Lee, James Kai | 2020-04-14 |
| 10615123 | Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same | Tatsuya Hinoue, Tomoyuki Obu, Tomohiro Uno, Yusuke Mukae, Rahul Sharangpani +2 more | 2020-04-07 |
| 10529620 | Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar, Senaka Kanakamedala, Fumitaka Amano +1 more | 2020-01-07 |