| 8785281 |
CMOS structure and method for fabrication thereof using multiple crystallographic orientations and gate materials |
Tze-Chiang Chen, Meikei Ieong, Rajarao Jammy, Chun-Yung Sung, Richard S. Wise +2 more |
2014-07-22 |
| 8507992 |
High-K metal gate CMOS |
Renee T. Mo, Huiming Bu, Michael P. Chudzik, William K. Henson, Vijay Narayanan |
2013-08-13 |
| 8193099 |
Protecting exposed metal gate structures from etching processes in integrated circuit manufacturing |
Renee T. Mo, Ravikumar Ramachandran, Richard S. Wise, Hongwen Yan |
2012-06-05 |
| 8158481 |
CMOS structure and method for fabrication thereof using multiple crystallographic orientations and gate materials |
Tze-Chiang Chen, Meikei Ieong, Rajarao Jammy, Chun-Yung Sung, Richard S. Wise +2 more |
2012-04-17 |
| 7993990 |
Multiple crystallographic orientation semiconductor structures |
Shreesh Narasimha, Paul D. Agnello, Xiaomeng Chen, Judson R. Holt, Byeong Y. Kim +1 more |
2011-08-09 |
| 7943460 |
High-K metal gate CMOS |
Renee T. Mo, Huiming Bu, Michael P. Chudzik, William K. Henson, Vijay Narayanan |
2011-05-17 |
| 7696573 |
Multiple crystallographic orientation semiconductor structures |
Shreesh Narasimha, Paul D. Agnello, Xiaomeng Chen, Judson R. Holt, Byeong Y. Kim +1 more |
2010-04-13 |
| 7671421 |
CMOS structure and method for fabrication thereof using multiple crystallographic orientations and gate materials |
Tze-Chiang Chen, Meikei Ieong, Rajarao Jammy, Chun-Yung Sung, Richard S. Wise +2 more |
2010-03-02 |
| 7109559 |
Nitrided ultra thin gate dielectrics |
Christopher P. D'Emic, Thomas T. Hwang, Paul C. Jamison, James J. Quinlivan, Beth Ward |
2006-09-19 |
| 6893979 |
Method for improved plasma nitridation of ultra thin gate dielectrics |
Christopher P. D'Emic, Thomas T. Hwang, Paul C. Jamison, James J. Quinlivan, Beth Ward |
2005-05-17 |
| 6635517 |
Use of disposable spacer to introduce gettering in SOI layer |
Tze-Chiang Chen, Thomas T. Hwang, Effendi Leobandung, Anda C. Mocuta, Paul A. Ronsheim +1 more |
2003-10-21 |
| 6569781 |
Method of forming an ultra-thin oxide layer on a silicon substrate by implantation of nitrogen through a sacrificial layer and subsequent annealing prior to oxide formation |
Omer H. Dokumaci, Richard D. Kaplan, Suryanarayan G. Hegde |
2003-05-27 |
| 6514843 |
Method of enhanced oxidation of MOS transistor gate corners |
Omer H. Dokumaci, Oleg Gluschenkov, Suryanarayan G. Hegde, Richard D. Kaplan |
2003-02-04 |
| 6096580 |
Low programming voltage anti-fuse |
S. Sundar Kumar Iyer, Liang Han, Robert Hannon, Subramanian S. Iyer |
2000-08-01 |
