BO

Bradley A. Orner

IBM: 25 patents #4,217 of 70,183Top 7%
Overall (All Time): #164,606 of 4,157,543Top 4%
25
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
8987067 Segmented guard ring structures with electrically insulated gap structures and design structures thereof Robert L. Barry, Phillip F. Chapman, Jeffrey P. Gambino, Michael L. Gautsch, Mark D. Jaffe +1 more 2015-03-24
8853043 Silicon germanium (SiGe) heterojunction bipolar transistor (HBT) Wade J. Hodge, Alvin J. Joseph, Rajendran Krishnasamy, Qizhi Liu 2014-10-07
8592293 Schottky barrier diodes for millimeter wave SiGe BiCMOS applications Jeffrey B. Johnson, Xuefeng Liu, Robert M. Rassel 2013-11-26
8525293 Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration Natalie B. Feilchenfeld, Benjamin T. Voegeli 2013-09-03
8421478 Radio frequency integrated circuit with on-chip noise source for self-test Brian A. Floyd, David R. Greenberg, Ramana Malladi, Scott K. Reynolds 2013-04-16
8338265 Silicided trench contact to buried conductive layer Douglas D. Coolbaugh, Jeffrey B. Johnson, Peter J. Lindgren, Xuefeng Liu, James S. Nakos +2 more 2012-12-25
8299500 Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region Wade J. Hodge, Alvin J. Joseph, Rajendran Krishnasamy, Qizhi Liu 2012-10-30
8288244 Lateral passive device having dual annular electrodes David S. Collins, Jeffrey B. Johnson, Xuefeng Liu, Robert M. Rassel, David C. Sheridan 2012-10-16
8236662 Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration Natalie B. Feilchenfeld, Benjamin T. Voegeli 2012-08-07
8217497 FIN differential MOS varactor diode Edward J. Nowak, Robert M. Rassel 2012-07-10
8105924 Deep trench based far subcollector reachthrough Robert M. Rassel, David C. Sheridan, Steven H. Voldman 2012-01-31
8030167 Varied impurity profile region formation for varying breakdown voltage of devices Douglas D. Coolbaugh, Louis D. Lanzerotti, Jay S. Rascoe, David C. Sheridan, Stephen A. St. Onge 2011-10-04
7936041 Schottky barrier diodes for millimeter wave SiGe BICMOS applications Jeffrey B. Johnson, Xuefeng Liu, Robert M. Rassel 2011-05-03
7892910 Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration Natalie B. Feilchenfeld, Benjamin T. Voegeli 2011-02-22
7888745 Bipolar transistor with dual shallow trench isolation and low base resistance Marwan H. Khater, Andreas D. Stricker, Mattias E. Dahlstrom 2011-02-15
7821097 Lateral passive device having dual annular electrodes David S. Collins, Jeffrey B. Johnson, Xuefeng Liu, Robert M. Rassel, David C. Sheridan 2010-10-26
7701015 Bipolar and CMOS integration with reduced contact height Zhong-Xiang He, Vidhya Ramachandran, Alvin J. Joseph, Stephen A. St. Onge, Ping-Chuan Wang 2010-04-20
7691734 Deep trench based far subcollector reachthrough Robert M. Rassel, David C. Sheridan, Steven H. Voldman 2010-04-06
7625792 Method of base formation in a BiCMOS process Peter J. Geiss, Alvin J. Joseph, Qizhi Liu 2009-12-01
7550787 Varied impurity profile region formation for varying breakdown voltage of devices Douglas D. Coolbaugh, Louis D. Lanzerotti, Jay S. Rascoe, David C. Sheridan, Stephen A. St. Onge 2009-06-23
7381997 Lateral silicided diodes Douglas D. Coolbaugh, Jeffrey B. Johnson, Xuefeng Liu, Robert M. Rassel, David C. Sheridan 2008-06-03
7335927 Lateral silicided diodes Douglas D. Coolbaugh, Jeffrey B. Johnson, Xuefeng Liu, Robert M. Rassel, David C. Sheridan 2008-02-26
7326987 Non-continuous encapsulation layer for MIM capacitor Wagdi W. Abadeer, Eric Adler, Zhong-Xiang He, Vidhya Ramachandran, Barbara Waterhouse +1 more 2008-02-05
6913965 Non-Continuous encapsulation layer for MIM capacitor Wagdi W. Abadeer, Eric Adler, Zhong-Xiang He, Vidhya Ramachandran, Barbara Waterhouse +1 more 2005-07-05
6911681 Method of base formation in a BiCMOS process Peter J. Geiss, Alvin J. Joseph, Qizhi Liu 2005-06-28