Issued Patents All Time
Showing 226–250 of 394 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9952823 | Architecture for seamless integrated display system | Johanna M. Swan, Uygar E. Avci, Islam A. Salama | 2018-04-24 |
| 9947780 | High electron mobility transistor (HEMT) and method of fabrication | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2018-04-17 |
| 9923087 | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Niti Goel +3 more | 2018-03-20 |
| 9911807 | Strain compensation in transistors | Van H. Le, Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Jack T. Kavalieros | 2018-03-06 |
| 9905651 | GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic, Gilbert Dewey +8 more | 2018-02-27 |
| 9876014 | Germanium-based quantum well devices | Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros, Marko Radosavljevic +5 more | 2018-01-23 |
| 9865684 | Nanoscale structure with epitaxial film having a recessed bottom portion | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2018-01-09 |
| 9859278 | Bi-axial tensile strained GE channel for CMOS | Prashant Majhi, Niloy Mukherjee, Willy Rachmady, Robert S. Chau | 2018-01-02 |
| 9853107 | Selective epitaxially grown III-V materials based devices | Matthew V. Metz, Jack T. Kavalieros, Gilbert Dewey, Willy Rachmady, Benjamin Chu-Kung +3 more | 2017-12-26 |
| 9825095 | Hybrid phase field effect transistor | Brian S. Doyle, Elijah V. Karpov, David L. Kencke, Uday Shah, Charles C. Kuo +1 more | 2017-11-21 |
| 9818847 | Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface | Gilbert Dewey, Robert S. Chau, Marko Radosavljevic, Han Wui Then, Scott B. Clendenning | 2017-11-14 |
| 9818884 | Strain compensation in transistors | Van H. Le, Benjamin Chu-Kung, Jack T. Kavalieros, Willy Rachmady, Harold W. Kennel | 2017-11-14 |
| 9818870 | Transistor structure with variable clad/core dimension for stress and bandgap | Willy Rachmady, Van H. Le, Marko Radosavljevic, Gilbert Dewey, Niloy Mukherjee +4 more | 2017-11-14 |
| 9812574 | Techniques and configurations for stacking transistors of an integrated circuit device | Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady, Van H. Le +3 more | 2017-11-07 |
| 9806193 | Stress in trigate devices using complimentary gate fill materials | Titash Rakshit, Martin D. Giles, Jack T. Kavalieros | 2017-10-31 |
| 9799759 | Techniques for forming non-planar germanium quantum well devices | Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung, Marko Radosavljevic +4 more | 2017-10-24 |
| 9786786 | Non-planar quantum well device having interfacial layer and method of forming same | Willy Rachmady, Van H. Le, Robert S. Chau | 2017-10-10 |
| 9755062 | III-N material structure for gate-recessed transistors | Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Benjamin Chu-Kung +2 more | 2017-09-05 |
| 9748371 | Transition metal dichalcogenide semiconductor assemblies | Marko Radosavljevic, Brian S. Doyle, Niloy Mukherjee, Sansaptak Dasgupta, Han Wui Then +1 more | 2017-08-29 |
| 9748338 | Preventing isolation leakage in III-V devices | Gilbert Dewey, Marko Radosavljevic, Benjamin Chu-Kung, Niloy Mukherjee | 2017-08-29 |
| 9736936 | Electronic fabric with incorporated chip and interconnect | Christopher J. Jezewski, Brian S. Doyle | 2017-08-15 |
| 9704981 | Techniques for forming contacts to quantum well transistors | Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros, Willy Rachmady +2 more | 2017-07-11 |
| 9698265 | Strained channel region transistors employing source and drain stressors and systems including the same | Van H. Le, Harold W. Kennel, Willy Rachmady, Jack T. Kavalieros, Niloy Mukherjee | 2017-07-04 |
| 9691857 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2017-06-27 |
| 9691848 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Van H. Le, Jessica S. Kachian, Marc C. French, Aaron A. Budrevich | 2017-06-27 |