Issued Patents All Time
Showing 276–300 of 394 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9478635 | Germanium-based quantum well devices | Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros, Marko Radosavljevic +5 more | 2016-10-25 |
| 9461141 | Contact techniques and configurations for reducing parasitic resistance in nanowire transistors | Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey, Niloy Mukherjee +3 more | 2016-10-04 |
| 9461160 | Non-planar III-N transistor | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2016-10-04 |
| 9455343 | Hybrid phase field effect transistor | Brian S. Doyle, Elijah V. Karpov, David L. Kencke, Uday Shah, Charles C. Kuo +1 more | 2016-09-27 |
| 9450092 | Stress in trigate devices using complimentary gate fill materials | Titash Rakshit, Martin D. Giles, Jack T. Kavalieros | 2016-09-20 |
| 9443936 | Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains | Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Marko Radosavljevic, Gilbert Dewey +2 more | 2016-09-13 |
| 9397166 | Strained channel region transistors employing source and drain stressors and systems including the same | Van H. Le, Harold W. Kennel, Willy Rachmady, Jack T. Kavalieros, Niloy Mukherjee | 2016-07-19 |
| 9397188 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2016-07-19 |
| 9391181 | Lattice mismatched hetero-epitaxial film | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2016-07-12 |
| 9374509 | Wearable imaging sensor for communications | Sairam Agraharam, John S. Guzek, Christopher J. Jezewski | 2016-06-21 |
| 9356099 | Techniques for forming contacts to quantum well transistors | Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros, Willy Rachmady +2 more | 2016-05-31 |
| 9343574 | Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack | Gilbert Dewey, Marko Radosavljevic, Benjamin Chu-Kung, Niloy Mukherjee | 2016-05-17 |
| 9337291 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian, Jack T. Kavalieros +5 more | 2016-05-10 |
| 9306068 | Stain compensation in transistors | Van H. Le, Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Jack T. Kavalieros | 2016-04-05 |
| 9293546 | Vertical tunneling negative differential resistance devices | — | 2016-03-22 |
| 9263557 | Techniques for forming non-planar germanium quantum well devices | Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung, Marko Radosavljevic +4 more | 2016-02-16 |
| 9257346 | Apparatus and methods for forming a modulation doped non-planar transistor | Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros | 2016-02-09 |
| 9253884 | Electronic fabric with incorporated chip and interconnect | Christopher J. Jezewski, Brian S. Doyle | 2016-02-02 |
| 9252275 | Non-planar gate all-around device and method of fabrication thereof | Willy Rachmady, Van Hoa Lee, Jack T. Kavalieros, Robert S. Chau, Jessica S. Kachian | 2016-02-02 |
| 9245989 | High voltage field effect transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2016-01-26 |
| 9240410 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2016-01-19 |
| 9236476 | Techniques and configuration for stacking transistors of an integrated circuit device | Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady, Van H. Le +3 more | 2016-01-12 |
| 9224754 | Stress in trigate devices using complimentary gate fill materials | Titash Rakshit, Martin D. Giles, Jack T. Kavalieros | 2015-12-29 |
| 9219135 | Germanium-based quantum well devices | Been-Yin Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros, Marko Radosavljevic +5 more | 2015-12-22 |
| 9209290 | III-N material structure for gate-recessed transistors | Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Benjamin Chu-Kung +2 more | 2015-12-08 |