Issued Patents All Time
Showing 276–300 of 340 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8373154 | Strained transistor integration for CMOS | Boyan Boyanov, Brian S. Doyle, Robert S. Chau | 2013-02-12 |
| 8313999 | Multi-gate semiconductor device with self-aligned epitaxial source and drain | Annalisa Cappellani, Tahir Ghani, Kuan-Yueh Shen, Harry Gomez | 2012-11-20 |
| 8237234 | Transistor gate electrode having conductor material layer | Boyan Boyanov, Suman Datta, Brian S. Doyle, Been-Yih Jin, Shaofeng Yu +1 more | 2012-08-07 |
| 8154087 | Multi-component strain-inducing semiconductor regions | Ted COOK, JR., Bernhard Sell | 2012-04-10 |
| 7968957 | Transistor gate electrode having conductor material layer | Boyan Boyanov, Suman Datta, Brian S. Doyle, Been-Yih Jin, Shaofeng Yu +1 more | 2011-06-28 |
| 7951673 | Forming abrupt source drain metal gate transistors | Nick Lindert, Suman Datta, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz +3 more | 2011-05-31 |
| 7943469 | Multi-component strain-inducing semiconductor regions | Ted COOK, JR., Bernhard Sell | 2011-05-17 |
| 7902009 | Graded high germanium compound films for strained semiconductor devices | Danielle Simonelli | 2011-03-08 |
| 7871916 | Transistor gate electrode having conductor material layer | Boyan Boyanov, Suman Datta, Brian S. Doyle, Been-Yih Jin, Shaofeng Yu +1 more | 2011-01-18 |
| 7858981 | Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain | Michael L. Hattendorf, Jack Hwang, Andrew N. Westmeyer | 2010-12-28 |
| 7833883 | Precursor gas mixture for depositing an epitaxial carbon-doped silicon film | Danielle Simonelli, Daniel B. Aubertine | 2010-11-16 |
| 7821044 | Transistor with improved tip profile and method of manufacture thereof | Mark Bohr, Steven J. Keating, Thomas A. Letson, Donald W. O'Neill, Willy Rachmady | 2010-10-26 |
| 7812394 | CMOS transistor junction regions formed by a CVD etching and deposition sequence | Glenn A. Glass, Andrew N. Westmeyer, Michael L. Hattendorf, Jeffrey R. Wank | 2010-10-12 |
| 7732285 | Semiconductor device having self-aligned epitaxial source and drain extensions | Bernhard Sell, Tahir Ghani, Harry Gomez | 2010-06-08 |
| 7704833 | Method of forming abrupt source drain metal gate transistors | Nick Lindert, Suman Datta, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz +3 more | 2010-04-27 |
| 7682916 | Field effect transistor structure with abrupt source/drain junctions | Robert S. Chau, Patrick Morrow, Chia-Hong Jan, Paul Packan | 2010-03-23 |
| 7678631 | Formation of strain-inducing films | Glenn A. Glass, Michael L. Hattendorf | 2010-03-16 |
| 7663192 | CMOS device and method of manufacturing same | Bernhard Sell, Mark Liu, Daniel B. Aubertine | 2010-02-16 |
| 7662689 | Strained transistor integration for CMOS | Boyan Boyanov, Brian S. Doyle, Robert S. Chau | 2010-02-16 |
| 7642610 | Transistor gate electrode having conductor material layer | Boyan Boyanov, Suman Datta, Brian S. Doyle, Been-Yih Jin, Shaofeng Yu +1 more | 2010-01-05 |
| 7517772 | Selective etch for patterning a semiconductor film deposited non-selectively | Willy Rachmady | 2009-04-14 |
| 7517768 | Method for fabricating a heterojunction bipolar transistor | Ravindra Soman, Peter J. Vandervoorn, Shahriar Ahmed | 2009-04-14 |
| 7494858 | Transistor with improved tip profile and method of manufacture thereof | Mark Bohr, Steven J. Keating, Thomas A. Letson, Donald W. O'Neill, Willy Rachmady | 2009-02-24 |
| 7492017 | Semiconductor transistor having a stressed channel | Robert S. Chau, Tahir Ghani | 2009-02-17 |
| 7479432 | CMOS transistor junction regions formed by a CVD etching and deposition sequence | Glenn A. Glass, Andrew N. Westmeyer, Michael L. Hattendorf, Jeffrey R. Wank | 2009-01-20 |