AM

Anand S. Murthy

IN Intel: 329 patents #17 of 30,777Top 1%
DP Daedalus Prime: 5 patents #1 of 21Top 5%
SO Sony: 4 patents #8,966 of 25,231Top 40%
TR Tahoe Research: 2 patents #16 of 215Top 8%
📍 Portland, OR: #9 of 9,213 inventorsTop 1%
🗺 Oregon: #17 of 28,073 inventorsTop 1%
Overall (All Time): #951 of 4,157,543Top 1%
340
Patents All Time

Issued Patents All Time

Showing 301–325 of 340 patents

Patent #TitleCo-InventorsDate
7479431 Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain Michael L. Hattendorf, Jack Hwang, Andrew N. Westmeyer 2009-01-20
7473947 Process for ultra-thin body SOI devices that incorporate EPI silicon tips and article made thereby Brian S. Doyle, Jack T. Kavalieros, Robert S. Chau 2009-01-06
7436035 Method of fabricating a field effect transistor structure with abrupt source/drain junctions Robert S. Chau, Patrick Morrow, Chia-Hong Jan, Paul Packan 2008-10-14
7427775 Fabricating strained channel epitaxial source/drain transistors Justin K. Brask, Andrew N. Westmeyer, Boyan Boyanov, Nick Lindert 2008-09-23
7422971 Process for ultra-thin body SOI devices that incorporate EPI silicon tips and article made thereby Brian S. Doyle, Jack T. Kavalieros, Robert S. Chau 2008-09-09
7402872 Method for forming an integrated circuit Glenn A. Glass, Andrew N. Westmeyer, Michael L. Hattendorf, Tahir Ghani 2008-07-22
7391087 MOS transistor structure and method of fabrication Robert S. Chau, Patrick Morrow 2008-06-24
7364976 Selective etch for patterning a semiconductor film deposited non-selectively Willy Rachmady 2008-04-29
7358547 Selective deposition to improve selectivity and structures formed thereby Nayanee Gupta, Chris Auth, Glenn A. Glass 2008-04-15
7338873 Method of fabricating a field effect transistor structure with abrupt source/drain junctions Robert S. Chau, Patrick Morrow, Chia-Hong Jan, Paul Packan 2008-03-04
7274055 Method for improving transistor performance through reducing the salicide interface resistance Boyan Boyanov, Glenn A. Glass, Thomas Hoffmann 2007-09-25
7226842 Fabricating strained channel epitaxial source/drain transistors Justin K. Brask, Andrew N. Westmeyer, Boyan Boyanov, Nick Lindert 2007-06-05
7223679 Transistor gate electrode having conductor material layer Boyan Boyanov, Suman Datta, Brian S. Doyle, Been-Yih Jin, Shaofeng Yu +1 more 2007-05-29
7202514 Self aligned compact bipolar junction transistor layout and method of making same Shahriar Ahmed, Mark Bohr, Stephen Chambers, Richard Green 2007-04-10
7195985 CMOS transistor junction regions formed by a CVD etching and deposition sequence Glenn A. Glass, Andrew N. Westmeyer, Michael L. Hattendorf, Jeffrey R. Wank 2007-03-27
7129139 Methods for selective deposition to improve selectivity Nayanee Gupta, Chris Auth, Glenn A. Glass 2006-10-31
7064042 Self aligned compact bipolar junction transistor layout, and method of making same Shahriar Ahmed, Mark Bohr, Stephen Chambers, Richard Green 2006-06-20
7060576 Epitaxially deposited source/drain Nick Lindert, Justin K. Brask 2006-06-13
7005359 Bipolar junction transistor with improved extrinsic base region and method of fabrication Shahriar Ahmed, Ravindra Soman, Mark Bohr 2006-02-28
6974733 Double-gate transistor with enhanced carrier mobility Boyan Boyanov, Brian S. Doyle, Jack T. Kavalieros, Robert S. Chau 2005-12-13
6972228 Method of forming an element of a microelectronic circuit Brian S. Doyle, Robert S. Chau 2005-12-06
6952040 Transistor structure and method of fabrication Robert S. Chau, Jack T. Kavalieros, Brian Roberds, Brian S. Doyle 2005-10-04
6949482 Method for improving transistor performance through reducing the salicide interface resistance Boyan Boyanov, Glenn A. Glass, Thomas Hoffmann 2005-09-27
6933589 Method of making a semiconductor transistor Boyan Boyanov, Ravindra Soman, Robert S. Chau 2005-08-23
6927140 Method for fabricating a bipolar transistor base Ravindra Soman 2005-08-09