Issued Patents All Time
Showing 251–275 of 340 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9385221 | Nanowire transistor with underlayer etch stops | Seiyon Kim, Daniel B. Aubertine, Kelin J. Kuhn | 2016-07-05 |
| 9349810 | Selective germanium P-contact metalization through trench | Glenn A. Glass, Tahir Ghani | 2016-05-24 |
| 9343559 | Nanowire transistor devices and forming techniques | Glenn A. Glass, Kelin J. Kuhn, Seiyon Kim, Daniel B. Aubertine | 2016-05-17 |
| 9231076 | Enhanced dislocation stress transistor | Cory E. Weber, Mark Liu, Hemant Deshpande, Daniel B. Aubertine | 2016-01-05 |
| 9224810 | CMOS nanowire structure | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Annalisa Cappellani, Stephen M. Cea +2 more | 2015-12-29 |
| 9224735 | Self-aligned contact metallization for reduced contact resistance | Glenn A. Glass, Tahir Ghani | 2015-12-29 |
| 9202889 | Method for improving transistor performance through reducing the salicide interface resistance | Boyan Boyanov, Glenn A. Glass, Thomas Hoffman | 2015-12-01 |
| 9184294 | High mobility strained channels for fin-based transistors | Stephen M. Cea, Glenn A. Glass, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +1 more | 2015-11-10 |
| 9153583 | III-V layers for N-type and P-type MOS source-drain contacts | Glenn A. Glass, Tahir Ghani | 2015-10-06 |
| 9117791 | Selective germanium P-contact metalization through trench | Glenn A. Glass, Tahir Ghani | 2015-08-25 |
| 9112029 | Strained transistor integration for CMOS | Boyan Boyanov, Brian S. Doyle, Robert S. Chau | 2015-08-18 |
| 9076814 | Enhanced dislocation stress transistor | Cory E. Weber, Mark Liu, Hemant Deshpande, Daniel B. Aubertine | 2015-07-07 |
| 9064944 | Nanowire transistor with underlayer etch stops | Seiyon Kim, Daniel B. Aubertine, Kelin J. Kuhn | 2015-06-23 |
| 9059024 | Self-aligned contact metallization for reduced contact resistance | Glenn A. Glass, Tahir Ghani | 2015-06-16 |
| 9012284 | Nanowire transistor devices and forming techniques | Glenn A. Glass, Kelin J. Kuhn, Seiyon Kim, Daniel B. Aubertine | 2015-04-21 |
| 8994104 | Contact resistance reduction employing germanium overlayer pre-contact metalization | Glenn A. Glass, Tahir Ghani | 2015-03-31 |
| 8957476 | Conversion of thin transistor elements from silicon to silicon germanium | Glenn A. Glass, Daniel B. Aubertine, Gaurav Thareja, Stephen M. Cea | 2015-02-17 |
| 8901537 | Transistors with high concentration of boron doped germanium | Glenn A. Glass, Tahir Ghani, Ravi Pillarisetty, Niloy Mukherjee, Jack T. Kavalieros +3 more | 2014-12-02 |
| 8896066 | Tin doped III-V material contacts | Glenn A. Glass, Michael Jackson, Harold W. Kennel | 2014-11-25 |
| 8847281 | High mobility strained channels for fin-based transistors | Stephen M. Cea, Glenn A. Glass, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +1 more | 2014-09-30 |
| 8779477 | Enhanced dislocation stress transistor | Cory E. Weber, Mark Liu, Hemant Deshpande, Daniel B. Aubertine | 2014-07-15 |
| 8748869 | Strained transistor integration for CMOS | Boyan Boyanov, Brian S. Doyle, Robert S. Chau | 2014-06-10 |
| 8642413 | Formation of strain-inducing films using hydrogenated amorphous silicon | Jeffrey Armstrong, Dennis G. Hanken | 2014-02-04 |
| 8482043 | Method for improving transistor performance through reducing the salicide interface resistance | Boyan Boyanov, Glenn A. Glass, Thomas Hoffman | 2013-07-09 |
| 8426858 | Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain | Michael L. Hattendorf, Jack Hwang, Andrew N. Westmeyer | 2013-04-23 |