Issued Patents All Time
Showing 201–225 of 309 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9564437 | Method and structure for forming FinFET CMOS with dual doped STI regions | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-02-07 |
| 9559014 | Self-aligned punch through stopper liner for bulk FinFET | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-01-31 |
| 9558991 | Formation of isolation surrounding well implantation | Kangguo Cheng, Shom Ponoth, Tenko Yamashita | 2017-01-31 |
| 9559009 | Gate structure cut after formation of epitaxial active regions | Xiuyu Cai, Kangguo Cheng, Johnathan E. Faltermeier, Ali Khakifirooz, Ruilong Xie | 2017-01-31 |
| 9553088 | Forming semiconductor device with close ground rules | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-01-24 |
| 9548243 | Self aligned via and pillar cut for at least a self aligned double pitch | Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo, Terry A. Spooner | 2017-01-17 |
| 9530698 | Method and structure for forming FinFET CMOS with dual doped STI regions | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2016-12-27 |
| 9508825 | Method and structure for forming gate contact above active area with trench silicide | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2016-11-29 |
| 9508587 | Formation of isolation surrounding well implantation | Kangguo Cheng, Shom Ponoth, Tenko Yamashita | 2016-11-29 |
| 9508818 | Method and structure for forming gate contact above active area with trench silicide | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2016-11-29 |
| 9490252 | MIM capacitor formation in RMG module | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2016-11-08 |
| 9490253 | Gate planarity for finFET using dummy polish stop | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2016-11-08 |
| 9484264 | Field effect transistor contacts | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2016-11-01 |
| 9478549 | FinFET with dielectric isolation by silicon-on-nothing and method of fabrication | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita | 2016-10-25 |
| 9472616 | Undercut insulating regions for silicon-on-insulator device | Kangguo Cheng, Bruce B. Doris, Balasubramanian Pranatharthiharan, Shom Ponoth, Tenko Yamashita | 2016-10-18 |
| 9449874 | Self-forming barrier for subtractive copper | Vamsi K. Paruchuri | 2016-09-20 |
| 9425184 | Electrostatic discharge devices and methods of manufacture | Huiming Bu, Junjun Li, Tenko Yamashita | 2016-08-23 |
| 9418902 | Forming isolated fins from a substrate | Kangguo Cheng, Shom Ponoth, Balasubramanian Pranatharthiharan, Tenko Yamashita | 2016-08-16 |
| 9406548 | Formation of isolation surrounding well implantation | Kangguo Cheng, Shom Ponoth, Tenko Yamashita | 2016-08-02 |
| 9406665 | Integrated passive devices for finFET technologies | Thomas N. Adam, Kangguo Cheng, Balasubramanian Pranatharthi Haran, Shom Ponoth, Tenko Yamashita | 2016-08-02 |
| 9406570 | FinFET device | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita | 2016-08-02 |
| 9379057 | Method and structure to reduce the electric field in semiconductor wiring interconnects | Elbert E. Huang, Takeshi Nogami, Raghuveer R. Patlolla, Christopher J. Penny | 2016-06-28 |
| 9373618 | Integrated FinFET capacitor | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2016-06-21 |
| 9373697 | Spacer replacement for replacement metal gate semiconductor devices | Sanjay C. Mehta, Shom Ponoth, Muthumanickam Sankarapandian, Tenko Yamashita | 2016-06-21 |
| 9368343 | Reduced external resistance finFET device | Kangguo Cheng, Shom Ponoth, Raghavasimhan Sreenivasan, Tenko Yamashita | 2016-06-14 |