| 9000522 |
FinFET with dielectric isolation by silicon-on-nothing and method of fabrication |
Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita |
2015-04-07 |
| 8999774 |
Bulk fin-field effect transistors with well defined isolation |
Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita |
2015-04-07 |
| 8993382 |
Bulk fin-field effect transistors with well defined isolation |
Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita |
2015-03-31 |
| 8987790 |
Fin isolation in multi-gate field effect transistors |
Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Shom Ponoth, Tenko Yamashita |
2015-03-24 |
| 8987837 |
Stress enhanced finFET devices |
Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita |
2015-03-24 |
| 8987800 |
Semiconductor structures with deep trench capacitor and methods of manufacture |
Kevin K. Chan, Sivananda K. Kanakasabapathy, Babar A. Khan, Masaharu Kobayashi, Effendi Leobandung +1 more |
2015-03-24 |
| 8946792 |
Dummy fin formation by gas cluster ion beam |
Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Shom Ponoth, Tenko Yamashita |
2015-02-03 |
| 8941156 |
Self-aligned dielectric isolation for FinFET devices |
Marc A. Bergendahl, Kangguo Cheng, David V. Horak, Ali Khakifirooz, Shom Ponoth +4 more |
2015-01-27 |
| 8932918 |
FinFET with self-aligned punchthrough stopper |
Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita |
2015-01-13 |
| 8928057 |
Uniform finFET gate height |
William J. Cote, Johnathan E. Faltermeier, Babar A. Khan, Ravikumar Ramachandran, Xinhui Wang |
2015-01-06 |
| 8928067 |
Bulk fin-field effect transistors with well defined isolation |
Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita |
2015-01-06 |
| 8916426 |
Passive devices for FinFET integrated circuit technologies |
William F. Clark, Jr., Robert J. Gauthier, Jr., Terence B. Hook, Junjun Li, Thomas A. Wallner |
2014-12-23 |
| 8859379 |
Stress enhanced finFET devices |
Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita |
2014-10-14 |
| 8841174 |
Silicon controlled rectifier with integral deep trench capacitor |
James P. Di Sarro, Robert J. Gauthier, Jr., Tom C. Lee, Junjun Li, Souvick Mitra +2 more |
2014-09-23 |
| 8835250 |
FinFET trench circuit |
Jonathan E. Faltermeier, Veeraraghavan S. Basker, Kangguo Cheng |
2014-09-16 |
| 8829617 |
Uniform finFET gate height |
Balasubramanian S. Haran, Sanjay C. Mehta, Shom Ponoth, Ravikumar Ramachandran, Stefan Schmitz |
2014-09-09 |
| 8828828 |
MOSFET including asymmetric source and drain regions |
Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita |
2014-09-09 |
| 8772874 |
MOSFET including asymmetric source and drain regions |
Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita |
2014-07-08 |
| 8748252 |
Replacement metal gate transistors using bi-layer hardmask |
Effendi Leobandung, William J. Cote, Laertis Economikos, Young-Hee Kim, Dae-Gyu Park +3 more |
2014-06-10 |
| 8723262 |
SOI FinFET with recessed merged fins and liner for enhanced stress coupling |
Veeraraghavan S. Basker, Huiming Bu, Effendi Leobandung, Tenko Yamashita, Chun-Chen Yeh |
2014-05-13 |
| 8703553 |
MOS capacitors with a finFET process |
Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita |
2014-04-22 |
| 8637384 |
FinFET parasitic capacitance reduction using air gap |
Takashi Ando, Josephine B. Chang, Sivananda K. Kanakasabapathy, Pranita Kulkarni, Tenko Yamashita |
2014-01-28 |
| 8637930 |
FinFET parasitic capacitance reduction using air gap |
Takashi Ando, Josephine B. Chang, Sivananda K. Kanakasabapathy, Pranita Kulkarni, Tenko Yamashita |
2014-01-28 |
| 8637931 |
finFET with merged fins and vertical silicide |
Veeraraghavan S. Basker, Andres Bryant, Huiming Bu, Wilfried E. Haensch, Effendi Leobandung +3 more |
2014-01-28 |
| 8623712 |
Bulk fin-field effect transistors with well defined isolation |
Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita |
2014-01-07 |