Issued Patents All Time
Showing 176–200 of 309 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9716042 | Fin field-effect transistor (FinFET) with reduced parasitic capacitance | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-07-25 |
| 9704848 | Electrostatic discharge devices and methods of manufacture | Huiming Bu, Junjun Li, Tenko Yamashita | 2017-07-11 |
| 9698212 | Three-dimensional metal resistor formation | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-07-04 |
| 9698215 | MIM capacitor formation in RMG module | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-07-04 |
| 9691877 | Replacement metal gate structures | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-06-27 |
| 9691659 | Via and chamfer control for advanced interconnects | Yann Mignot, Chih-Chao Yang | 2017-06-27 |
| 9685507 | FinFET devices | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-06-20 |
| 9685532 | Replacement metal gate structures | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-06-20 |
| 9666529 | Method and structure to reduce the electric field in semiconductor wiring interconnects | Elbert E. Huang, Takeshi Nogami, Raghuveer R. Patlolla, Christopher J. Penny | 2017-05-30 |
| 9666533 | Airgap formation between source/drain contacts and gates | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-05-30 |
| 9653456 | MIM capacitor formation in RMG module | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-05-16 |
| 9653575 | Vertical transistor with a body contact for back-biasing | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-05-16 |
| 9633906 | Gate structure cut after formation of epitaxial active regions | Xiuyu Cai, Kangguo Cheng, Johnathan E. Faltermeier, Ali Khakifirooz, Ruilong Xie | 2017-04-25 |
| 9634005 | Gate planarity for FinFET using dummy polish stop | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-04-25 |
| 9627373 | CMOS compatible fuse or resistor using self-aligned contacts | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-04-18 |
| 9627377 | Self-aligned dielectric isolation for FinFET devices | Marc A. Bergendahl, Kangguo Cheng, David V. Horak, Ali Khakifirooz, Shom Ponoth +4 more | 2017-04-18 |
| 9613869 | FinFET devices | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-04-04 |
| 9607943 | Capacitors | Veeraraghavan S. Basker, Kangguo Cheng, Christopher J. Penny, Junli Wang | 2017-03-28 |
| 9601378 | Semiconductor fins for FinFET devices and sidewall image transfer (SIT) processes for manufacturing the same | Veeraraghavan S. Basker, Kangguo Cheng | 2017-03-21 |
| 9595578 | Undercut insulating regions for silicon-on-insulator device | Kangguo Cheng, Bruce B. Doris, Balasubramanian Pranatharthiharan, Shom Ponoth, Tenko Yamashita | 2017-03-14 |
| 9576980 | FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-02-21 |
| 9576852 | Integrated circuits with self aligned contacts and methods of manufacturing the same | Ming He, Seowoo Nam, Yann Mignot, Jim Kelly, Raghuveer Patlotta | 2017-02-21 |
| 9576096 | Semiconductor structures including an integrated finFET with deep trench capacitor and methods of manufacture | Kevin K. Chan, Sivananda K. Kanakasabapathy, Babar A. Khan, Masaharu Kobayashi, Effendi Leobandung +1 more | 2017-02-21 |
| 9570591 | Forming semiconductor device with close ground rules | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-02-14 |
| 9570571 | Gate stack integrated metal resistors | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-02-14 |