Issued Patents All Time
Showing 801–825 of 1,139 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10002792 | HDP fill with reduced void formation and spacer damage | Huiming Bu, Andrew M. Greene, Balasubramanian Pranatharthiharan | 2018-06-19 |
| 10002965 | Fin field effect transistor complementary metal oxide semiconductor with dual strained channels with solid phase doping | Kangguo Cheng, Tenko Yamashita | 2018-06-19 |
| 10002939 | Nanosheet transistors having thin and thick gate dielectric material | Kangguo Cheng, Tenko Yamashita, Chun-Chen Yeh | 2018-06-19 |
| 10002932 | Self-aligned contact protection using reinforced gate cap and spacer portions | Min Gyu Sung, Hoon Kim, Chanro Park | 2018-06-19 |
| 9997403 | Metal layer tip to tip short | Cheng Chi | 2018-06-12 |
| 9997418 | Dual liner silicide | Balasubramanian Pranatharthiharan, Chun-Chen Yeh | 2018-06-12 |
| 9991131 | Dual mandrels to enable variable fin pitch | Min Gyu Sung, Chanro Park | 2018-06-05 |
| 9991352 | Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device | Julien Frougier, Ali Razavieh, Steven Bentley | 2018-06-05 |
| 9985135 | Replacement low-k spacer | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2018-05-29 |
| 9984936 | Methods of forming an isolated nano-sheet transistor device and the resulting device | Siva P. Adusumilli, Kangguo Cheng, Pietro Montanini, Robinhsinku Chao | 2018-05-29 |
| 9984893 | Fin cut for taper device | Kangguo Cheng, Tenko Yamashita | 2018-05-29 |
| 9978608 | Fin patterning for a fin-type field-effect transistor | Min Gyu Sung, Nigel G. Cave, Lars Liebmann | 2018-05-22 |
| 9972494 | Method and structure to control channel length in vertical FET device | Steven Bentley | 2018-05-15 |
| 9966456 | Methods of forming gate electrodes on a vertical transistor device | Chanro Park, Steven Bentley, Hoon Kim, Min Gyu Sung | 2018-05-08 |
| 9966430 | Stacked nanowire device width adjustment by gas cluster ion beam (GCIB) | Kangguo Cheng, Xin Miao, Tenko Yamashita | 2018-05-08 |
| 9960271 | Method of forming vertical field effect transistors with different threshold voltages and the resulting integrated circuit structure | Chun-Chen Yeh, Tenko Yamashita, Kangguo Cheng | 2018-05-01 |
| 9960077 | Ultra-scale gate cut pillar with overlay immunity and method for producing the same | Hui Zang, Josef S. Watts | 2018-05-01 |
| 9953834 | Method of making self-aligned continuity cuts in mandrel and non-mandrel metal lines | Lei Sun, Xunyuan Zhang, Ryan Ryoung-Han Kim | 2018-04-24 |
| 9954104 | Multiwidth finFET with channel cladding | Ajey Poovannummoottil Jacob | 2018-04-24 |
| 9953978 | Replacement gate structures for transistor devices | Kisik Choi, Su Chen Fan, Shom Ponoth | 2018-04-24 |
| 9953977 | FinFET semiconductor device | Kangguo Cheng, Tenko Yamashita, Chun-Chen Yeh | 2018-04-24 |
| 9953879 | Preventing oxidation defects in strain-relaxed fins by reducing local gap fill voids | Min Gyu Sung, Hoon Kim, Chanro Park | 2018-04-24 |
| 9947589 | Methods of forming a gate contact for a transistor above an active region and the resulting device | Chanro Park, Lars Liebmann, Andre P. Labonte, Nigel G. Cave, Mark V. Raymond | 2018-04-17 |
| 9947804 | Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure | Julien Frougier, Min Gyu Sung, Chanro Park, Steven Bentley | 2018-04-17 |
| 9947793 | Vertical pillar-type field effect transistor and method | Kangguo Cheng, Tenko Yamashita | 2018-04-17 |