Issued Patents All Time
Showing 26–50 of 87 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6936512 | Semiconductor method and structure for simultaneously forming a trench capacitor dielectric and trench sidewall device dielectric | Michael P. Chudzik, Rajarao Jammy, Carl Radens, Kenneth T. Settlemyer, Jr., Padraic Shafer | 2005-08-30 |
| 6933189 | Integration system via metal oxide conversion | Lawrence A. Clevenger, Louis L. Hsu, Carl Radens | 2005-08-23 |
| 6930060 | Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric | Anthony I. Chou, Michael P. Chudzik, Toshiharu Furukawa, Oleg Gluschenkov, Paul Kirsch +1 more | 2005-08-16 |
| 6909145 | Metal spacer gate for CMOS FET | Cyril Cabral, Jr., Lawrence A. Clevenger, Louis L. Hsu, Kwong Hon Wong | 2005-06-21 |
| 6794721 | Integration system via metal oxide conversion | Lawrence A. Clevenger, Louis L. Hsu, Carl Radens | 2004-09-21 |
| 6770526 | Silicon nitride island formation for increased capacitance | Michael P. Chudzik, Jochen Beintner | 2004-08-03 |
| 6743670 | High dielectric constant materials forming components of DRAM such as deep-trench capacitors and gate dielectric (insulators) for support circuits | Lawrence A. Clevenger, Louis L. Hsu, Carl Radens | 2004-06-01 |
| 6664161 | Method and structure for salicide trench capacitor plate electrode | Michael P. Chudzik, Jack A. Mandelman, Carl Radens, Rajarao Jammy, Kenneth T. Settlemyer, Jr. +1 more | 2003-12-16 |
| 6652956 | X-ray printing personalization technique | Lawrence A. Clevenger, David B. Goland, Louis L. Hsu, Subhash L. Shinde | 2003-11-25 |
| 6653246 | High dielectric constant materials | Michael P. Chudzik, Lawrence A. Clevenger, Louis L. Hsu, Deborah A. Neumayer | 2003-11-25 |
| 6638681 | X-ray printing personalization technique | Lawrence A. Clevenger, David B. Goland, Louis L. Hsu, Subhash L. Shinde | 2003-10-28 |
| 6620724 | Low resistivity deep trench fill for DRAM and EDRAM applications | Uwe Schroeder, Helmut Tews, Irene McStay, Manfred Hauf, Matthias Goldbach +5 more | 2003-09-16 |
| 6563160 | High dielectric constant materials forming components of DRAM such as deep-trench capacitors and gate dielectric (insulators) for support circuits | Lawrence A. Clevenger, Louis L. Hsu, Carl Radens | 2003-05-13 |
| 6541331 | Method of manufacturing high dielectric constant material | Michael P. Chudzik, Lawrence A. Clevenger, Louis L. Hsu, Deborah A. Neumayer | 2003-04-01 |
| 6509612 | High dielectric constant materials as gate dielectrics (insulators) | Lawrence A. Clevenger, Louis L. Hsu, Carl Radens | 2003-01-21 |
| 6441421 | High dielectric constant materials forming components of DRAM storage cells | Lawrence A. Clevenger, Louis L. Hsu, Carl Radens | 2002-08-27 |
| 6268299 | Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability | Rajarao Jammy, Johnathan E. Faltermeier, Keitaro Imai, Ryota Katsumata, Jean-Marc Rousseau +1 more | 2001-07-31 |
| 6071767 | High performance/high density BICMOS process | Michael D. Monkowski, Seiki Ogura, Nivo Rovedo | 2000-06-06 |
| 5892257 | Packing density for flash memories | Joyce Elizabeth Acocella, Carol Galli, Louis L. Hsu, Seiki Ogura, Nivo Rovedo | 1999-04-06 |
| 5729043 | Shallow trench isolation with self aligned PSG layer | — | 1998-03-17 |
| 5663578 | Thin film transistor with self-aligned bottom gate | Louis L. Hsu, Mary J. Saccamango | 1997-09-02 |
| 5646053 | Method and structure for front-side gettering of silicon-on-insulator substrates | Dominic J. Schepis | 1997-07-08 |
| 5643813 | Packing density for flash memories by using a pad oxide | Joyce Elizabeth Acocella, Carol Galli, Louis L. Hsu, Seiki Ogura, Nivo Rovedo | 1997-07-01 |
| 5622881 | Packing density for flash memories | Joyce Elizabeth Acocella, Carol Galli, Louis L. Hsu, Seiki Ogura, Nivo Rovedo | 1997-04-22 |
| 5616513 | Shallow trench isolation with self aligned PSG layer | — | 1997-04-01 |