Issued Patents All Time
Showing 51–75 of 92 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8043920 | finFETS and methods of making same | Kevin K. Chan, Thomas S. Kanarsky, Jinghong Li, Christine Qiqing Ouyang, Zhibin Ren +2 more | 2011-10-25 |
| 8030716 | Self-aligned CMOS structure with dual workfunction | Michael P. Chudzik, Vijay Narayanan, Vamsi K. Paruchuri | 2011-10-04 |
| 7989298 | Transistor having V-shaped embedded stressor | Kevin K. Chan, Brian J. Greene, Judson R. Holt, Jeffrey B. Johnson, Thomas S. Kanarsky +4 more | 2011-08-02 |
| 7947549 | Gate effective-workfunction modification for CMOS | Michael P. Chudzik, Rashmi Jha, Siddarth A. Krishnan, Naim Moumen, Vijay Narayanan +1 more | 2011-05-24 |
| 7911008 | SRAM cell having a rectangular combined active area for planar pass gate and planar pull-down NFETS | Xiangdong Chen, Shang-Bin Ko | 2011-03-22 |
| 7893502 | Threshold voltage improvement employing fluorine implantation and adjustment oxide layer | Weipeng Li, Melanie J. Sherony, Jin-Ping Han, Yong Meng Lee | 2011-02-22 |
| 7872303 | FinFET with longitudinal stress in a channel | Kevin K. Chan, Qiqing C. Ouyang, Xinhui Wang | 2011-01-18 |
| 7867839 | Method to reduce threshold voltage (Vt) in silicon germanium (SiGe), high-k dielectric-metal gate, p-type metal oxide semiconductor field effect transistors | Xiangdong Chen, Jong Ho Lee, Weipeng Li, Kenneth J. Stein, Voon-Yew Thean | 2011-01-11 |
| 7863126 | Fabrication of a CMOS structure with a high-k dielectric layer oxidizing an aluminum layer in PFET region | Michael P. Chudzik, Vijay Narayanan, Vamsi K. Paruchuri | 2011-01-04 |
| 7683418 | High-temperature stable gate structure with metallic electrode | Oleg Gluschenkov, Michael A. Gribelyuk, Kwong Hon Wong | 2010-03-23 |
| 7666774 | CMOS structure including dual metal containing composite gates | Huilong Zhu, Zhijiong Luo, Ying Zhang | 2010-02-23 |
| 7611979 | Metal gates with low charge trapping and enhanced dielectric reliability characteristics for high-k gate dielectric stacks | Alessandro C. Callegari, Michael P. Chudzik, Barry P. Linder, Renee T. Mo, Vijay Narayanan +2 more | 2009-11-03 |
| 7528042 | Method for fabricating semiconductor devices having dual gate oxide layer | Kwan-Yong Lim, Heung-Jae Cho, Tae-Ho Cha, In-Seok Yeo | 2009-05-05 |
| 7521345 | High-temperature stable gate structure with metallic electrode | Oleg Gluschenkov, Michael A. Gribelyuk, Kwong Hon Wong | 2009-04-21 |
| 7504696 | CMOS with dual metal gate | Huilong Zhu, Zhijiong Luo | 2009-03-17 |
| 7504700 | Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method | Wenjuan Zhu, Michael P. Chudzik, Oleg Gluschenkov, Akihisa Sekiguchi | 2009-03-17 |
| 7485910 | Simplified vertical array device DRAM/eDRAM integration: method and structure | Deok-kee Kim, Ramachandra Divakaruni, Carl Radens | 2009-02-03 |
| 7439128 | Method of creating deep trench capacitor using a P+ metal electrode | Ramachandra Divakaruni, Jack A. Mandelman | 2008-10-21 |
| 7282403 | Temperature stable metal nitride gate electrode | Cyril Cabral, Jr., Oleg Gluschenkov, Hyungjun Kim | 2007-10-16 |
| 7279413 | High-temperature stable gate structure with metallic electrode | Oleg Gluschenkov, Michael A. Gribelyuk, Kwong Hon Wong | 2007-10-09 |
| 7157359 | Method of forming a metal gate in a semiconductor device using atomic layer deposition process | Heung-Jae Cho, Kwan-Yong Lim | 2007-01-02 |
| 7157339 | Method for fabricating semiconductor devices having dual gate oxide layers | Kwan-Yong Lim, Heung-Jae Cho, Tae-Ho Cha, In-Seok Yeo | 2007-01-02 |
| 7084024 | Gate electrode forming methods using conductive hard mask | Oleg Gluschenkov | 2006-08-01 |
| 7023064 | Temperature stable metal nitride gate electrode | Cyril Cabral, Jr., Oleg Gluschenkov, Hyungjun Kim | 2006-04-04 |
| 6967137 | Forming collar structures in deep trench capacitors with thermally stable filler material | Michael P. Belyansky, Rama Divakaruni, Jack A. Mandelman | 2005-11-22 |