Issued Patents All Time
Showing 76–92 of 92 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6909137 | Method of creating deep trench capacitor using a P+ metal electrode | Ramachandra Divakaruni, Jack A. Mandelman | 2005-06-21 |
| 6828185 | CMOS of semiconductor device and method for manufacturing the same | Kwan-Yong Lim, Heung-Jae Cho, In-Seok Yeo | 2004-12-07 |
| 6768179 | CMOS of semiconductor device and method for manufacturing the same | Heung-Jae Cho, Kwan-Yong Lim | 2004-07-27 |
| 6664160 | Gate structure with high K dielectric | Heung-Jae Cho | 2003-12-16 |
| 6642132 | Cmos of semiconductor device and method for manufacturing the same | Heung-Jae Cho, Kwan-Yong Lim | 2003-11-04 |
| 6579767 | Method for forming aluminum oxide as a gate dielectric | Se-Aug Jang, Jeong-Youb Lee, Hung-Jae Cho, Jung Ho Kim | 2003-06-17 |
| 6524918 | Method for manufacturing a gate structure incorporating therein aluminum oxide as a gate dielectric | Se-Aug Jang, Jeong-Youb Lee | 2003-02-25 |
| 6514826 | Method of forming a gate electrode in a semiconductor device | Tae-Ho Cha | 2003-02-04 |
| 6511875 | Method for making high K dielectric gate for semiconductor device | Heung-Jae Cho | 2003-01-28 |
| 6506676 | Method of manufacturing semiconductor devices with titanium aluminum nitride work function | Tae-Ho Cha, Se-Aug Jang, Heung-Jae Cho, Tae-Kyun Kim, Kwan-Yong Lim +2 more | 2003-01-14 |
| 6448166 | Method for forming a gate for semiconductor devices | Heung-Jae Cho, Kwan-Yong Lim | 2002-09-10 |
| 6391727 | Method of manufacturing a semiconductor device utilizing a(Al2O3)X-(TiO2)1-X gate dielectric film | — | 2002-05-21 |
| 6391724 | Method for manufacturing a gate structure incorporating aluminum oxide as a gate dielectric | — | 2002-05-21 |
| 6355548 | Method for manufacturing a gate structure incorporated therein a high K dielectric | — | 2002-03-12 |
| 6323083 | Method for forming lower electrode structure of capacitor of semiconductor device | Sang-Hyeob Lee | 2001-11-27 |
| 6171941 | Method for fabricating capacitor of semiconductor memory device using titanium aluminum nitride as diffusion-inhibiting layer | Sang-Hyeob Lee | 2001-01-09 |
| 5919281 | 2-stage fluidized bed furnace for pre-reducing fine iron ore and method for pre-reducing fine iron ore using the furnace | Suk In Park, Il Ock Lee | 1999-07-06 |