Issued Patents All Time
Showing 26–50 of 304 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12243770 | Hard mask removal without damaging top epitaxial layer | Yann Mignot, Daniel J. Vincent, Su Chen Fan, Christopher J. Waskiewicz, Hsueh-Chung Chen | 2025-03-04 |
| 12224203 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Juntao Li, Eric G. Liniger, Sanjay C. Mehta +2 more | 2025-02-11 |
| 12211848 | Field effect transistors comprising a matrix of gate-all-around channels | Julien Frougier, Ruilong Xie, Kangguo Cheng | 2025-01-28 |
| 12183740 | Stacked field-effect transistors | Ruilong Xie, Kangguo Cheng, Curtis S. Durfee, Jay William Strane, Min Gyu Sung +1 more | 2024-12-31 |
| 12176345 | Stacked FET with independent gate control | Ruilong Xie, Julien Frougier, Kangguo Cheng, Juntao Li | 2024-12-24 |
| 12150310 | Ferroelectric random-access memory cell | Kangguo Cheng, Julien Frougier, Ruilong Xie, Min Gyu Sung | 2024-11-19 |
| 12148617 | Structure and method to pattern pitch lines | Chi-Chun Liu, Stuart A. Sieg, Yann Mignot, Koichi Motoyama, Hsueh-Chung Chen | 2024-11-19 |
| 12142562 | Subtractive metal etch with improved isolation for BEOL interconnect and cross point | Yann Mignot, Hsueh-Chung Chen | 2024-11-12 |
| 12107014 | Nanosheet transistors with self-aligned gate cut | Julien Frougier, Huimei Zhou, Ruilong Xie, Kangguo Cheng | 2024-10-01 |
| 12094972 | Gate-all-around field effect transistors having end portions of nanosheet channel layers adjacent to source/drain regions being wider than the center portions | Julien Frougier, Ruilong Xie, Kangguo Cheng | 2024-09-17 |
| 12094949 | Fin-type field effect transistor having a wrap-around gate with bottom isolation and inner spacers to reduce parasitic capacitance | Choonghyun Lee, Ruilong Xie, Kangguo Cheng | 2024-09-17 |
| 12087624 | Beol tip-to-tip shorting and time dependent dielectric breakdown | Koichi Motoyama, Kenneth Chun Kuen Cheng, Chih-Chao Yang | 2024-09-10 |
| 12062609 | Electronic fuse structure embedded in top via | Koichi Motoyama, Hsueh-Chung Chen, Chih-Chao Yang | 2024-08-13 |
| 12057395 | Top via interconnects without barrier metal between via and above line | Koichi Motoyama, Kenneth Chun Kuen Cheng, Chih-Chao Yang | 2024-08-06 |
| 12046643 | Semiconductor structures with power rail disposed under active gate | Julien Frougier, Ruilong Xie, Kangguo Cheng | 2024-07-23 |
| 12027416 | BEOL etch stop layer without capacitance penalty | Koichi Motoyama, Kenneth Chun Kuen Cheng, Chih-Chao Yang | 2024-07-02 |
| 12009422 | Self aligned top contact for vertical transistor | Choonghyun Lee, Christopher J. Waskiewicz, Alexander Reznicek | 2024-06-11 |
| 12004436 | RRAM with high work function cap | Soon-Cheon Seo, Min Gyu Sung, Takashi Ando, Mary Claire Silvestre, Xuefeng Liu | 2024-06-04 |
| 12004435 | Tunable resistive random access memory cell | Min Gyu Sung, Soon-Cheon Seo | 2024-06-04 |
| 12002850 | Nanosheet-based semiconductor structure with dielectric pillar | Kangguo Cheng, Julien Frougier, Ruilong Xie | 2024-06-04 |
| 11972977 | Fabrication of rigid close-pitch interconnects | Kenneth Chun Kuen Cheng, Koichi Motoyama, Kisik Choi | 2024-04-30 |
| 11955526 | Thick gate oxide device option for nanosheet device | Ruilong Xie, Kangguo Cheng, Julien Frougier, Veeraraghavan S. Basker | 2024-04-09 |
| 11942374 | Nanosheet field effect transistor with a source drain epitaxy replacement | Ruilong Xie, Julien Frougier, Kangguo Cheng | 2024-03-26 |
| 11937521 | Structure and method to fabricate resistive memory with vertical pre-determined filament | Kangguo Cheng, Ruilong Xie, Choonghyun Lee | 2024-03-19 |
| 11935930 | Wrap-around-contact for 2D-channel gate-all-around field-effect-transistors | Julien Frougier, Ruilong Xie, Kangguo Cheng, Andrew Gaul | 2024-03-19 |