Issued Patents All Time
Showing 76–100 of 304 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11569361 | Nanosheet transistors with wrap around contact | Julien Frougier, Ruilong Xie, Kangguo Cheng | 2023-01-31 |
| 11527535 | Variable sheet forkFET device | Julien Frougier, Ruilong Xie, Kangguo Cheng | 2022-12-13 |
| 11476163 | Confined gate recessing for vertical transport field effect transistors | Ruilong Xie, Sung-Dae Suk, Heng Wu | 2022-10-18 |
| 11456181 | Cross-bar fin formation | Kangguo Cheng, Ruilong Xie, Juntao Li | 2022-09-27 |
| 11443982 | Formation of trench silicide source or drain contacts without gate damage | Andrew M. Greene, Ruilong Xie, Laertis Economikos, Veeraraghavan S. Basker, Hui Zang | 2022-09-13 |
| 11437489 | Techniques for forming replacement metal gate for VFET | Ruilong Xie, Heng Wu, Kangguo Cheng | 2022-09-06 |
| 11410879 | Subtractive back-end-of-line vias | Koichi Motoyama, Kenneth Chun Kuen Cheng, Chih-Chao Yang | 2022-08-09 |
| 11380581 | Interconnect structures of semiconductor devices having a via structure through an upper conductive line | Andre P. Labonte, Catherine B. Labelle | 2022-07-05 |
| 11328954 | Bi metal subtractive etch for trench and via formation | Yann Mignot, Chih-Chao Yang, Injo Ok, Hsueh-Chung Chen | 2022-05-10 |
| 11315872 | Self-aligned top via | Koichi Motoyama, Kenneth Chun Kuen Cheng, Kisik Choi, Chih-Chao Yang | 2022-04-26 |
| 11315799 | Back end of line structures with metal lines with alternating patterning and metallization schemes | Ruilong Xie, Chih-Chao Yang, Kangguo Cheng, Juntao Li | 2022-04-26 |
| 11309220 | Methods, apparatus, and manufacturing system for self-aligned patterning of a vertical transistor | Ruilong Xie, Min Gyu Sung | 2022-04-19 |
| 11289375 | Fully aligned interconnects with selective area deposition | Kenneth Chun Kuen Cheng, Koichi Motoyama, Chih-Chao Yang | 2022-03-29 |
| 11282838 | Stacked gate structures | Chen Zhang, Dechao Guo, Junli Wang, Ruilong Xie, Kangguo Cheng +5 more | 2022-03-22 |
| 11270913 | BEOL metallization formation | Kenneth Chun Kuen Cheng, Koichi Motoyama, Brent A. Anderson, Somnath Ghosh | 2022-03-08 |
| 11264481 | Self-aligned source and drain contacts | Kangguo Cheng, Ruilong Xie, Juntao Li | 2022-03-01 |
| 11257718 | Contact structures | Stan Tsai | 2022-02-22 |
| 11244854 | Dual damascene fully aligned via in interconnects | Kenneth Chun Kuen Cheng, Koichi Motoyama, Chih-Chao Yang | 2022-02-08 |
| 11244853 | Fully aligned via interconnects with partially removed etch stop layer | Koichi Motoyama, Kenneth Chun Kuen Cheng, Chih-Chao Yang | 2022-02-08 |
| 11244897 | Back end of line metallization | Koichi Motoyama, Kenneth Chun Kuen Cheng, Somnath Ghosh, Chih-Chao Yang | 2022-02-08 |
| 11211462 | Using selectively formed cap layers to form self-aligned contacts to source/drain regions | Choonghyun Lee, Kangguo Cheng, Ruilong Xie | 2021-12-28 |
| 11211452 | Transistor having stacked source/drain regions with formation assistance regions and multi-region wrap-around source/drain contacts | Ruilong Xie, Reinaldo Vega, Kangguo Cheng, Juntao Li | 2021-12-28 |
| 11205591 | Top via interconnect with self-aligned barrier layer | Kenneth Chun Kuen Cheng, Koichi Motoyama, Chih-Chao Yang | 2021-12-21 |
| 11201056 | Pitch multiplication with high pattern fidelity | Koichi Motoyama, Kenneth Chun Kuen Cheng, Chih-Chao Yang | 2021-12-14 |
| 11201112 | Fully-aligned skip-vias | Kenneth Chun Kuen Cheng, Koichi Motoyama, Chih-Chao Yang | 2021-12-14 |