Issued Patents All Time
Showing 101–125 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10032773 | FinFET with reduced capacitance | Veeraraghavan S. Basker, Kangguo Cheng, Charles W. Koburger, III | 2018-07-24 |
| 10020257 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Juntao Li | 2018-07-10 |
| 10014371 | Stressed nanowire stack for field effect transistor | Martin M. Frank, Pouya Hashemi, Alexander Reznicek | 2018-07-03 |
| 10014322 | Local SOI fins with multiple heights | Kangguo Cheng, Joel P. de Souza, Alexander Reznicek, Dominic J. Schepis | 2018-07-03 |
| 10011920 | Low-temperature selective epitaxial growth of silicon for device integration | Bahman Hekmatshoar-Tabari, Alexander Reznicek, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi | 2018-07-03 |
| 10008585 | Semiconductor structure with an L-shaped bottom plate | Kangguo Cheng, Wilfried E. Haensch, Davood Shahrjerdi | 2018-06-26 |
| 10008415 | Gate structure cut after formation of epitaxial active regions | Xiuyu Cai, Kangguo Cheng, Johnathan E. Faltermeier, Theodorus E. Standaert, Ruilong Xie | 2018-06-26 |
| 10002948 | FinFET having highly doped source and drain regions | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2018-06-19 |
| 9997540 | Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2018-06-12 |
| 9985135 | Replacement low-k spacer | Xiuyu Cai, Kangguo Cheng, Ruilong Xie | 2018-05-29 |
| 9985030 | FinFET semiconductor device having integrated SiGe fin | Kangguo Cheng, Hong He, Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2018-05-29 |
| 9978775 | FinFET device with abrupt junctions | Kangguo Cheng, Hong He, Alexander Reznicek, Soon-Cheon Seo | 2018-05-22 |
| 9966387 | Strain release in pFET regions | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2018-05-08 |
| 9966374 | Semiconductor device with gate structures having low-K spacers on sidewalls and electrical contacts therebetween | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2018-05-08 |
| 9960168 | Capacitor strap connection structure and fabrication method | Veeraraghavan S. Basker, Kangguo Cheng, Benjamin Cipriany, Ramachandra Divakaruni, Brian J. Greene +2 more | 2018-05-01 |
| 9954116 | Electrostatically enhanced fins field effect transistors | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2018-04-24 |
| 9954083 | Semiconductor structures having increased channel strain using fin release in gate regions | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2018-04-24 |
| 9953918 | Method of fabricating anti-fuse for silicon on insulator devices | Kangguo Cheng, Juntao Li | 2018-04-24 |
| 9947763 | FinFET with reduced capacitance | Veeraraghavan S. Basker, Kangguo Cheng, Charles W. Koburger, III | 2018-04-17 |
| 9947689 | Semiconductor device structure with 110-PFET and 111-NFET current flow direction | Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek | 2018-04-17 |
| 9941385 | Finfet with reduced capacitance | Veeraraghavan S. Basker, Kangguo Cheng, Charles W. Koburger, III | 2018-04-10 |
| 9941205 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Juntao Li | 2018-04-10 |
| 9935181 | FinFET having highly doped source and drain regions | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2018-04-03 |
| 9929163 | Selective epitaxy growth for semiconductor devices with fin field-effect transistors (FinFET) | Veeraraghavan S. Basker, Kangguo Cheng | 2018-03-27 |
| 9917200 | Nanowire transistor structures with merged source/drain regions using auxiliary pillars | Pouya Hashemi, Alexander Reznicek | 2018-03-13 |