Issued Patents All Time
Showing 51–75 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10396027 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Juntao Li | 2019-08-27 |
| 10388814 | III-V solar cell structure with multi-layer back surface field | Bahman Hekmatshoartabari, Ghavam G. Shahidi, Davood Shahrjerdi | 2019-08-20 |
| 10389519 | Hardware based cryptographic side-channel attack prevention | Kangguo Cheng, Shawn P. Fetterolf | 2019-08-20 |
| 10388754 | Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling | Xiuyu Cai, Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2019-08-20 |
| 10361155 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Juntao Li | 2019-07-23 |
| 10361337 | Micro light-emitting diode (LED) display and fluidic self-assembly of same | Khaled Ahmed, Anup Pancholi | 2019-07-23 |
| 10361311 | Semiconductor structure including low-k spacer material | Xiuyu Cai, Kangguo Cheng, Ruilong Xie | 2019-07-23 |
| 10347752 | Semiconductor structures having increased channel strain using fin release in gate regions | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2019-07-09 |
| 10347628 | Simultaneously fabricating a high voltage transistor and a FinFET | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2019-07-09 |
| 10340368 | Fin formation in fin field effect transistors | Kangguo Cheng, Bruce B. Doris, Hong He, Yunpeng Yin | 2019-07-02 |
| 10319645 | Method for forming a semiconductor structure containing high mobility semiconductor channel materials | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2019-06-11 |
| 10304944 | Semiconductor structure with an L-shaped bottom | Kangguo Cheng, Wilfried E. Haensch, Davood Shahrjerdi | 2019-05-28 |
| 10276252 | Data storage device with operation based on temperature difference | Aliasgar S. Madraswala, Xin Guo, Pranav Kalavade, Sagar Upadhyay | 2019-04-30 |
| 10262991 | Distributed decoupling capacitor | Kangguo Cheng, Darsen D. Lu, Ghavam G. Shahidi | 2019-04-16 |
| 10262905 | Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs | Kangguo Cheng, Bruce B. Doris, Qing Liu, Nicolas Loubet, Scott Luning | 2019-04-16 |
| 10243044 | FinFETs with high quality source/drain structures | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2019-03-26 |
| 10242734 | Resuming storage die programming after power loss | Rohit S. Shenoy, Pranav Kalavade, Aliasgar S. Madraswala, Yogesh B. Wakchaure | 2019-03-26 |
| 10236384 | Formation of FinFET junction | Kevin K. Chan, Pouya Hashemi, John A. Ott, Alexander Reznicek | 2019-03-19 |
| 10217869 | Semiconductor structure including low-K spacer material | Xiuyu Cai, Kangguo Cheng, Ruilong Xie | 2019-02-26 |
| 10217818 | Method of formation of germanium nanowires on bulk substrates | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2019-02-26 |
| 10204916 | Selective epitaxy growth for semiconductor devices with fin field-effect transistors (FinFET) | Veeraraghavan S. Basker, Kangguo Cheng | 2019-02-12 |
| 10186676 | Emissive devices for displays | Khaled Ahmed, Richmond Hicks | 2019-01-22 |
| 10177169 | Semiconductor device structure with 110-PFET and 111-NFET current flow direction | Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek | 2019-01-08 |
| 10177154 | Structure and method to prevent EPI short between trenches in FinFET eDRAM | Michael V. Aquilino, Veeraraghavan S. Basker, Kangguo Cheng, Gregory Costrini, Byeong Y. Kim +5 more | 2019-01-08 |
| 10170499 | FinFET device with abrupt junctions | Kangguo Cheng, Hong He, Alexander Reznicek, Soon-Cheon Seo | 2019-01-01 |