Issued Patents All Time
Showing 126–150 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9917188 | Dielectric isolated fin with improved fin profile | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Kern Rim | 2018-03-13 |
| 9917105 | Replacement fin process in SSOI wafer | Bruce B. Doris, Hong He, Junli Wang | 2018-03-13 |
| 9917052 | Method of fabricating anti-fuse for silicon on insulator devices | Kangguo Cheng, Juntao Li | 2018-03-13 |
| 9917015 | Dual channel material for finFET for high performance CMOS | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2018-03-13 |
| 9911741 | Dual channel material for finFET for high performance CMOS | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2018-03-06 |
| 9911739 | III-V FinFET CMOS with III-V and germanium-containing channel closely spaced | Kangguo Cheng, Alexander Reznicek, Ghavam G. Shahidi | 2018-03-06 |
| 9911662 | Forming a CMOS with dual strained channels | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2018-03-06 |
| 9899384 | Self aligned structure and method for high-K metal gate work function tuning | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2018-02-20 |
| 9899378 | Simultaneously fabricating a high voltage transistor and a finFET | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2018-02-20 |
| 9892978 | Forming a CMOS with dual strained channels | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2018-02-13 |
| 9892926 | Replacement low-k spacer | Xiuyu Cai, Kangguo Cheng, Ruilong Xie | 2018-02-13 |
| 9871118 | Semiconductor structure with an L-shaped bottom plate | Kangguo Cheng, Wilfried E. Haensch, Davood Shahrjerdi | 2018-01-16 |
| 9870989 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Juntao Li | 2018-01-16 |
| 9865737 | Formation of FinFET junction | Kevin K. Chan, Pouya Hashemi, John A. Ott, Alexander Reznicek | 2018-01-09 |
| 9865511 | Formation of strained fins in a finFET device | Pouya Hashemi, Alexander Reznicek | 2018-01-09 |
| 9859369 | Semiconductor device including nanowire transistors with hybrid channels | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2018-01-02 |
| 9859425 | Field-effect transistor with aggressively strained fins | Pouya Hashemi, Alexander Reznicek | 2018-01-02 |
| 9853166 | Perfectly symmetric gate-all-around FET on suspended nanowire | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-12-26 |
| 9837440 | FinFET device with abrupt junctions | Kangguo Cheng, Hong He, Alexander Reznicek, Soon-Cheon Seo | 2017-12-05 |
| 9831241 | Method and structure for improving finFET with epitaxy source/drain | Kangguo Cheng, Alexander Reznicek, Tenko Yamashita | 2017-11-28 |
| 9825174 | FinFET with dielectric isolated channel | Kangguo Cheng, Alexander Reznicek, Soon-Cheon Seo | 2017-11-21 |
| 9818741 | Structure and method to prevent EPI short between trenches in FINFET eDRAM | Michael V. Aquilino, Veeraraghavan S. Basker, Kangguo Cheng, Gregory Costrini, Byeong Y. Kim +5 more | 2017-11-14 |
| 9818877 | Embedded source/drain structure for tall finFET and method of formation | Veeraraghavan S. Basker, Kangguo Cheng, Henry K. Utomo, Reinaldo Vega | 2017-11-14 |
| 9812357 | Self-limiting silicide in highly scaled fin technology | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2017-11-07 |
| 9812394 | Faceted structure formed by self-limiting etch | Kangguo Cheng, Juntao Li, Werner Rausch | 2017-11-07 |