Issued Patents All Time
Showing 151–175 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9812530 | High germanium content silicon germanium fins | Karthik Balakrishnan, John Bruley, Pouya Hashemi, John A. Ott, Alexander Reznicek | 2017-11-07 |
| 9806127 | Micro wall light emitting diodes | Khaled Ahmed | 2017-10-31 |
| 9799730 | FINFETs with high quality source/drain structures | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2017-10-24 |
| 9799569 | Method of forming field effect transistors (FETs) with abrupt junctions and integrated circuit chips with the FETs | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-10-24 |
| 9793341 | Deep trench capacitor with metal plate | Davood Shahrjerdi, Herbert L. Ho, Kangguo Cheng | 2017-10-17 |
| 9793379 | FinFET spacer without substrate gouging or spacer foot | Veeraraghavan S. Basker, Kangguo Cheng, Raghavasimhan Sreenivasan | 2017-10-17 |
| 9793274 | CMOS transistors including gate spacers of the same thickness | Veeraraghavan S. Basker, Kangguo Cheng | 2017-10-17 |
| 9786497 | Double aspect ratio trapping | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2017-10-10 |
| 9780173 | High aspect ratio trapping semiconductor with uniform height and isolated from bulk substrate | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-10-03 |
| 9773867 | FinFET semiconductor devices with replacement gate structures | Ruilong Xie, Xiuyu Cai, Kangguo Cheng | 2017-09-26 |
| 9773905 | Strained FinFET by epitaxial stressor independent of gate pitch | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek, Charan V. Surisetty | 2017-09-26 |
| 9773907 | Method to controllably etch silicon recess for ultra shallow junctions | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2017-09-26 |
| 9761610 | Strain release in PFET regions | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2017-09-12 |
| 9761667 | Semiconductor structure with a silicon germanium alloy fin and silicon germanium alloy pad structure | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-09-12 |
| 9761499 | Semiconductor device structure with 110-PFET and 111-NFET current flow direction | Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek | 2017-09-12 |
| 9754941 | Method and structure to form tensile strained SiGe fins and compressive strained SiGe fins on a same substrate | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2017-09-05 |
| 9746442 | Switched-capacitor biosensor device | Bahman Hekmatshoartabari, Ghavam G. Shahidi, Davood Shahrjerdi | 2017-08-29 |
| 9748114 | Method for forming through silicon via in N+ epitaxy wafers with reduced parasitic capacitance | Kangguo Cheng, Subramanian S. Iyer, Pranita Kerber | 2017-08-29 |
| 9748365 | SiGe and Si FinFET structures and methods for making the same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2017-08-29 |
| 9741672 | Preventing unauthorized use of integrated circuits for radiation-hard applications | Kangguo Cheng, Bruce B. Doris, Kenneth P. Rodbell | 2017-08-22 |
| 9741722 | Dummy gate structure for electrical isolation of a fin DRAM | John E. Barth, Jr., Kangguo Cheng, Bruce B. Doris, Herbert L. Ho, Babar A. Khan +4 more | 2017-08-22 |
| 9735162 | Dynamic random access memory cell with self-aligned strap | John E. Barth, Jr., Kangguo Cheng, Herbert L. Ho, Ravikumar Ramachandran, Kern Rim +1 more | 2017-08-15 |
| 9735257 | finFET having highly doped source and drain regions | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2017-08-15 |
| 9735160 | Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-08-15 |
| 9735272 | Method to controllably etch silicon recess for ultra shallow junctions | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2017-08-15 |