Issued Patents All Time
Showing 51–71 of 71 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5843277 | Dry-etch of indium and tin oxides with C2H5I gas | Haruhiro Harry Goto, Yuh-Jia Su, Yuen-Kui Wong | 1998-12-01 |
| 5788778 | Deposition chamber cleaning technique using a high power remote excitation source | Quanyuan Shang, Dan Maydan | 1998-08-04 |
| 5755886 | Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing | David N. Wang, John M. White, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1998-05-26 |
| 5753133 | Method and apparatus for etching film layers on large substrates | Jerry Wong, Masato Toshima, Dan Maydan, Norman L. Turner | 1998-05-19 |
| 5728608 | Tapered dielectric etch in semiconductor devices | Yuh-Jia Su, Yuen-Kui Wong, Haruhiro (Harry) Goto | 1998-03-17 |
| 5607602 | High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas | Yuh-Jia Su, Yuen-Kui Wong, Haruhiro Harry Goto | 1997-03-04 |
| 5589233 | Single chamber CVD process for thin film transistors | Robert Robertson, Guofu J. Feng | 1996-12-31 |
| 5567476 | Multi-step chemical vapor deposition method for thin film transistors | Robert Robertson, Michael Kollrack, Angela Lee, Takako Takehara, Guofu J. Feng +1 more | 1996-10-22 |
| 5441768 | Multi-step chemical vapor deposition method for thin film transistors | Robert Robertson, Michael Kollrack, Angela Lee, Takako Takehara, Guofu J. Feng +1 more | 1995-08-15 |
| 5399387 | Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates | Robert Robertson, Pamela Lou, Marc M. Kollrack, Angela Lee, Dan Maydan | 1995-03-21 |
| 5380566 | Method of limiting sticking of body to susceptor in a deposition treatment | Robert Robertson, Marc M. Kollrack, Angela Lee, Dan Maydan | 1995-01-10 |
| 5366585 | Method and apparatus for protection of conductive surfaces in a plasma processing reactor | Robert Robertson, John M. White | 1994-11-22 |
| 5362526 | Plasma-enhanced CVD process using TEOS for depositing silicon oxide | David N. Wang, John M. White, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1994-11-08 |
| 5354715 | Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | David N. Wang, John M. White, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1994-10-11 |
| 5244841 | Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing | Jeffrey Marks, David N. Wang, Dan Maydan | 1993-09-14 |
| 5204288 | Method for planarizing an integrated circuit structure using low melting inorganic material | Jeffrey Marks, David N. Wang, Dan Maydan | 1993-04-20 |
| 5112776 | Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing | Jeffrey Marks, David N. Wang, Dan Mayden | 1992-05-12 |
| 5000113 | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | David N. Wang, John M. White, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1991-03-19 |
| 4960488 | Reactor chamber self-cleaning process | Cissy Leung, Ching Chiang Tang, Kenneth S. Collins, Mei Chang, Jerry Wong +1 more | 1990-10-02 |
| 4892753 | Process for PECVD of silicon oxide using TEOS decomposition | David N. Wang, John M. White, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1990-01-09 |
| 4872947 | CVD of silicon oxide using TEOS decomposition and in-situ planarization process | David N. Wang, John M. White, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1989-10-10 |