Issued Patents All Time
Showing 51–71 of 71 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6090303 | Process for etching oxides in an electromagnetically coupled planar plasma apparatus | Kenneth S. Collins | 2000-07-18 |
| 6083412 | Plasma etch apparatus with heated scavenging surfaces | Michael R. Rice, David W. Groechel, Nicolas Bright | 2000-07-04 |
| 6068784 | Process used in an RF coupled plasma reactor | Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +6 more | 2000-05-30 |
| 6051499 | Apparatus and method for distribution of slurry in a chemical mechanical polishing system | Robert D. Tolles, William L. Guthrie, Tsungnan Cheng, Semyon Spektor, Ivan A. Ocanada +1 more | 2000-04-18 |
| 6036877 | Plasma reactor with heated source of a polymer-hardening precursor material | Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more | 2000-03-14 |
| 6024826 | Plasma reactor with heated source of a polymer-hardening precursor material | Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more | 2000-02-15 |
| 5990017 | Plasma reactor with heated source of a polymer-hardening precursor material | Kenneth S. Collins, Michael R. Rice, David W. Groechel, Gerald Yin, Jon Mohn +5 more | 1999-11-23 |
| 5899801 | Method and apparatus for removing a substrate from a polishing pad in a chemical mechanical polishing system | Robert D. Tolles, James Nystrom, William R. Bartlett, Victor Belitsky | 1999-05-04 |
| 5888414 | Plasma reactor and processes using RF inductive coupling and scavenger temperature control | Kenneth S. Collins, Chan-Lon Yang, Jerry Wong, Peter Keswick, David W. Groechel | 1999-03-30 |
| 5772832 | Process for etching oxides in an electromagnetically coupled planar plasma apparatus | Kenneth S. Collins | 1998-06-30 |
| 5770099 | Plasma etch apparatus with heated scavenging surfaces | Michael R. Rice, David W. Groechel, Nicolas Bright | 1998-06-23 |
| 5583737 | Electrostatic chuck usable in high density plasma | Kenneth S. Collins, John Trow, Joshua Chiu-Wing Tsui, Craig A. Roderick, Nicolas Bright +2 more | 1996-12-10 |
| 5556501 | Silicon scavenger in an inductively coupled RF plasma reactor | Kenneth S. Collins, Craig A. Roderick, John Trow, Chan-Lon Yang, Jerry Wong +7 more | 1996-09-17 |
| 5539609 | Electrostatic chuck usable in high density plasma | Kenneth S. Collins, John Trow, Joshua Chiu-Wing Tsui, Craig A. Roderick, Nicolas Bright +2 more | 1996-07-23 |
| 5477975 | Plasma etch apparatus with heated scavenging surfaces | Michael R. Rice, David W. Groechel, Nicolas Bright | 1995-12-26 |
| 5423945 | Selectivity for etching an oxide over a nitride | Kenneth S. Collins, Chan-Lon Yang, David W. Groechel, Peter Keswick | 1995-06-13 |
| 5399237 | Etching titanium nitride using carbon-fluoride and carbon-oxide gas | Peter Keswick | 1995-03-21 |
| 5350479 | Electrostatic chuck for high power plasma processing | Kenneth S. Collins, John Trow, Joshua Chiu-Wing Tsui, Craig A. Roderick, Nicolas Bright +1 more | 1994-09-27 |
| 5244841 | Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing | Kam S. Law, David N. Wang, Dan Maydan | 1993-09-14 |
| 5204288 | Method for planarizing an integrated circuit structure using low melting inorganic material | Kam S. Law, David N. Wang, Dan Maydan | 1993-04-20 |
| 5112776 | Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing | Kam S. Law, David N. Wang, Dan Mayden | 1992-05-12 |