Issued Patents 2018
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10141437 | Extreme high mobility CMOS logic | Suman Datta, Mantu K. Hudait, Mark L. Doczy, Amlan Majumdar, Justin K. Brask +3 more | 2018-11-27 |
| 10121897 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Suman Datta, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2018-11-06 |
| 10121861 | Nanowire transistor fabrication with hardmask layers | Seung Hoon Sung, Seiyon Kim, Kelin J. Kuhn, Willy Rachmady | 2018-11-06 |
| 10103263 | Strained channel region transistors employing source and drain stressors and systems including the same | Van H. Le, Harold W. Kennel, Willy Rachmady, Ravi Pillarisetty, Niloy Mukherjee | 2018-10-16 |
| 10096474 | Methods and structures to prevent sidewall defects during selective epitaxy | Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz +6 more | 2018-10-09 |
| 10096709 | Aspect ratio trapping (ART) for fabricating vertical semiconductor devices | Van H. Le, Benjamin Chu-Kung, Gilbert Dewey, Ravi Pillarisetty, Willy Rachmady +4 more | 2018-10-09 |
| 10084043 | High mobility nanowire fin channel on silicon substrate formed using sacrificial sub-fin | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Tahir Ghani, Anand S. Murthy +4 more | 2018-09-25 |
| 10084058 | Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains | Prashant Majhi, Mantu K. Hudait, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +2 more | 2018-09-25 |
| 10038054 | Variable gate width for gate all-around transistors | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Robert S. Chau, Seung Hoon Sung | 2018-07-31 |
| 10026829 | Semiconductor device with isolated body portion | Annalisa Cappellani, Stephen M. Cea, Tahir Ghani, Harry Gomez, Patrick H. Keys +5 more | 2018-07-17 |
| 10026845 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2018-07-17 |
| 9991172 | Forming arsenide-based complementary logic on a single substrate | Mantu K. Hudait, Suman Datta, Marko Radosavljevic | 2018-06-05 |
| 9972686 | Germanium tin channel transistors | Ravi Pillarisetty, Van H. Le, Willy Rachmady, Roza Kotlyar, Marko Radosavljevic +4 more | 2018-05-15 |
| 9947780 | High electron mobility transistor (HEMT) and method of fabrication | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Matthew V. Metz +3 more | 2018-04-17 |
| 9934976 | Methods of forming low interface resistance rare earth metal contacts and structures formed thereby | Niloy Mukherjee, Matt Metz, Gilbert Dewey, Robert S. Chau | 2018-04-03 |
| 9929273 | Apparatus and methods of forming fin structures with asymmetric profile | Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Gilbert Dewey, Nadia M. Rahhal-Orabi +3 more | 2018-03-27 |
| 9911807 | Strain compensation in transistors | Van H. Le, Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty | 2018-03-06 |
| 9905651 | GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more | 2018-02-27 |
| 9899505 | Conductivity improvements for III-V semiconductor devices | Marko Radosavljevic, Prashant Majhi, Niti Goel, Wilman Tsai, Niloy Mukherjee +3 more | 2018-02-20 |
| 9893149 | High mobility strained channels for fin-based transistors | Stephen M. Cea, Anand S. Murthy, Glenn A. Glass, Daniel B. Aubertine, Tahir Ghani +1 more | 2018-02-13 |
| 9876014 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Marko Radosavljevic +5 more | 2018-01-23 |
| 9865684 | Nanoscale structure with epitaxial film having a recessed bottom portion | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2018-01-09 |