Issued Patents 2018
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10103263 | Strained channel region transistors employing source and drain stressors and systems including the same | Harold W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros, Niloy Mukherjee | 2018-10-16 |
| 10096709 | Aspect ratio trapping (ART) for fabricating vertical semiconductor devices | Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Ravi Pillarisetty, Willy Rachmady +4 more | 2018-10-09 |
| 10038054 | Variable gate width for gate all-around transistors | Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros, Robert S. Chau, Seung Hoon Sung | 2018-07-31 |
| 10026845 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Seung Hoon Sung, Jessica S. Kachian, Jack T. Kavalieros +5 more | 2018-07-17 |
| 10020371 | Contact techniques and configurations for reducing parasitic resistance in nanowire transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Gilbert Dewey, Niloy Mukherjee +3 more | 2018-07-10 |
| 10008565 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French, Aaron A. Budrevich | 2018-06-26 |
| 9972686 | Germanium tin channel transistors | Ravi Pillarisetty, Willy Rachmady, Roza Kotlyar, Marko Radosavljevic, Han Wui Then +4 more | 2018-05-15 |
| 9911807 | Strain compensation in transistors | Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2018-03-06 |
| 9905651 | GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Marko Radosavljevic, Gilbert Dewey +8 more | 2018-02-27 |
| 9865684 | Nanoscale structure with epitaxial film having a recessed bottom portion | Benjamin Chu-Kung, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey, Niti Goel +8 more | 2018-01-09 |