| 10158065 |
Spin-transfer torque memory (STTM) devices having magnetic contacts |
Brian S. Doyle, Kaan Oguz, Charles C. Kuo, Mark L. Doczy, Satyarth Suri +2 more |
2018-12-18 |
$25,622,000 |
| 10141437 |
Extreme high mobility CMOS logic |
Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Amlan Majumdar +3 more |
2018-11-27 |
$28,030,000 |
| 10134727 |
High breakdown voltage III-N depletion mode MOS capacitors |
Han Wui Then, Sansaptak Dasgupta, Gerhard Schrom, Valluri Rao |
2018-11-20 |
$25,900,000 |
| 10121897 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
Suman Datta, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz |
2018-11-06 |
$18,970,000 |
| 10096682 |
III-N devices in Si trenches |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung, Marko Radosavljevic +3 more |
2018-10-09 |
$20,353,000 |
| 10096709 |
Aspect ratio trapping (ART) for fabricating vertical semiconductor devices |
Van H. Le, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Ravi Pillarisetty +4 more |
2018-10-09 |
$20,353,000 |
| 10096683 |
Group III-N transistor on nanoscale template structures |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner +1 more |
2018-10-09 |
$20,353,000 |
| 10096474 |
Methods and structures to prevent sidewall defects during selective epitaxy |
Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz +6 more |
2018-10-09 |
$20,353,000 |
| 10090461 |
Oxide-based three-terminal resistive switching logic devices |
Elijah V. Karpov, Prashant Majhi, Ravi Pillarisetty, Brian S. Doyle, Niloy Mukherjee +1 more |
2018-10-02 |
$23,827,000 |
| 10056456 |
N-channel gallium nitride transistors |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung, Sanaz K. Gardner |
2018-08-21 |
$25,621,000 |
| 10038054 |
Variable gate width for gate all-around transistors |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jack T. Kavalieros, Seung Hoon Sung |
2018-07-31 |
$36,087,000 |
| 10032911 |
Wide band gap transistor on non-native semiconductor substrate |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +2 more |
2018-07-24 |
$23,531,000 |
| 9947780 |
High electron mobility transistor (HEMT) and method of fabrication |
Han Wui Then, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2018-04-17 |
$23,996,000 |
| 9934976 |
Methods of forming low interface resistance rare earth metal contacts and structures formed thereby |
Niloy Mukherjee, Matt Metz, Gilbert Dewey, Jack T. Kavalieros |
2018-04-03 |
$16,515,000 |
| 9923087 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Niti Goel +3 more |
2018-03-20 |
$13,809,000 |
| 9922826 |
Integrated circuit die having reduced defect group III-nitride layer and methods associated therewith |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung |
2018-03-20 |
$13,809,000 |
| 9905651 |
GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation |
Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more |
2018-02-27 |
$23,267,000 |
| 9882121 |
Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer |
Charles C. Kuo, Kaan Oguz, Brian S. Doyle, Mark L. Doczy, David L. Kencke +1 more |
2018-01-30 |
$22,157,000 |
| 9882123 |
Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same |
Brian S. Doyle, Charles C. Kuo, Kaan Oguz, Uday Shah, Elijah V. Karpov +2 more |
2018-01-30 |
$22,157,000 |
| 9876014 |
Germanium-based quantum well devices |
Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more |
2018-01-23 |
$21,180,000 |
| 9865684 |
Nanoscale structure with epitaxial film having a recessed bottom portion |
Benjamin Chu-Kung, Van H. Le, Sansaptak Dasgupta, Gilbert Dewey, Niti Goel +8 more |
2018-01-09 |
$14,051,000 |
| 9859278 |
Bi-axial tensile strained GE channel for CMOS |
Prashant Majhi, Niloy Mukherjee, Ravi Pillarisetty, Willy Rachmady |
2018-01-02 |
$11,729,000 |
