| 10096709 |
Aspect ratio trapping (ART) for fabricating vertical semiconductor devices |
Van H. Le, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Ravi Pillarisetty +4 more |
2018-10-09 |
| 10096683 |
Group III-N transistor on nanoscale template structures |
Han Wui Then, Sansaptak Dasgupta, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more |
2018-10-09 |
| 10096682 |
III-N devices in Si trenches |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung, Benjamin Chu-Kung +3 more |
2018-10-09 |
| 10090405 |
Semiconductor device having group III-V material active region and graded gate dielectric |
Gilbert Dewey, Ravi Pillarisetty, Matthew V. Metz |
2018-10-02 |
| 10084043 |
High mobility nanowire fin channel on silicon substrate formed using sacrificial sub-fin |
Gilbert Dewey, Matthew V. Metz, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani +4 more |
2018-09-25 |
| 10084058 |
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains |
Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Gilbert Dewey +2 more |
2018-09-25 |
| 10074718 |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack |
Gilbert Dewey, Ravi Pillarisetty, Benjamin Chu-Kung, Niloy Mukherjee |
2018-09-11 |
| 10056456 |
N-channel gallium nitride transistors |
Han Wui Then, Sansaptak Dasgupta, Seung Hoon Sung, Sanaz K. Gardner, Robert S. Chau |
2018-08-21 |
| 10050015 |
Multi-device flexible electronics system on a chip (SOC) process integration |
Ravi Pillarisetty, Sansaptak Dasgupta, Niloy Mukherjee, Brian S. Doyle, Han Wui Then |
2018-08-14 |
| 10032911 |
Wide band gap transistor on non-native semiconductor substrate |
Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Benjamin Chu-Kung, Seung Hoon Sung +2 more |
2018-07-24 |
| 10026845 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2018-07-17 |
| 10020371 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey +3 more |
2018-07-10 |
| 9991172 |
Forming arsenide-based complementary logic on a single substrate |
Mantu K. Hudait, Jack T. Kavalieros, Suman Datta |
2018-06-05 |
| 9972686 |
Germanium tin channel transistors |
Ravi Pillarisetty, Van H. Le, Willy Rachmady, Roza Kotlyar, Han Wui Then +4 more |
2018-05-15 |
| 9947780 |
High electron mobility transistor (HEMT) and method of fabrication |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2018-04-17 |
| 9927211 |
Cloaking system with waveguides |
Ian A. Young, Johanna M. Swan, Robert L. Sankman |
2018-03-27 |
| 9922826 |
Integrated circuit die having reduced defect group III-nitride layer and methods associated therewith |
Sansaptak Dasgupta, Han Wui Then, Robert S. Chau, Sanaz K. Gardner, Seung Hoon Sung |
2018-03-20 |
| 9923087 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
Sansaptak Dasgupta, Han Wui Then, Niloy Mukherjee, Niti Goel, Sanaz K. Gardner +3 more |
2018-03-20 |
| 9905651 |
GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation |
Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Gilbert Dewey +8 more |
2018-02-27 |
| 9899505 |
Conductivity improvements for III-V semiconductor devices |
Prashant Majhi, Jack T. Kavalieros, Niti Goel, Wilman Tsai, Niloy Mukherjee +3 more |
2018-02-20 |
| 9876014 |
Germanium-based quantum well devices |
Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more |
2018-01-23 |
| 9865684 |
Nanoscale structure with epitaxial film having a recessed bottom portion |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more |
2018-01-09 |