| 10096709 |
Aspect ratio trapping (ART) for fabricating vertical semiconductor devices |
Van H. Le, Benjamin Chu-Kung, Jack T. Kavalieros, Ravi Pillarisetty, Willy Rachmady +4 more |
2018-10-09 |
$20,353,000 |
| 10096474 |
Methods and structures to prevent sidewall defects during selective epitaxy |
Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz +6 more |
2018-10-09 |
$20,353,000 |
| 10090405 |
Semiconductor device having group III-V material active region and graded gate dielectric |
Marko Radosavljevic, Ravi Pillarisetty, Matthew V. Metz |
2018-10-02 |
$23,827,000 |
| 10084058 |
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains |
Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic +2 more |
2018-09-25 |
$26,257,000 |
| 10084043 |
High mobility nanowire fin channel on silicon substrate formed using sacrificial sub-fin |
Matthew V. Metz, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani, Anand S. Murthy +4 more |
2018-09-25 |
$26,257,000 |
| 10074718 |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack |
Marko Radosavljevic, Ravi Pillarisetty, Benjamin Chu-Kung, Niloy Mukherjee |
2018-09-11 |
$19,778,000 |
| 10026845 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2018-07-17 |
$22,904,000 |
| 10020371 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Niloy Mukherjee +3 more |
2018-07-10 |
$30,438,000 |
| 9972686 |
Germanium tin channel transistors |
Ravi Pillarisetty, Van H. Le, Willy Rachmady, Roza Kotlyar, Marko Radosavljevic +4 more |
2018-05-15 |
$21,346,000 |
| 9947780 |
High electron mobility transistor (HEMT) and method of fabrication |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Jack T. Kavalieros, Matthew V. Metz +3 more |
2018-04-17 |
$23,996,000 |
| 9934976 |
Methods of forming low interface resistance rare earth metal contacts and structures formed thereby |
Niloy Mukherjee, Matt Metz, Jack T. Kavalieros, Robert S. Chau |
2018-04-03 |
$16,515,000 |
| 9929273 |
Apparatus and methods of forming fin structures with asymmetric profile |
Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Nadia M. Rahhal-Orabi, Tahir Ghani +3 more |
2018-03-27 |
$21,620,000 |
| 9911835 |
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs |
Roza Kotlyar, Stephen M. Cea, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more |
2018-03-06 |
$18,859,000 |
| 9905651 |
GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation |
Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more |
2018-02-27 |
$23,267,000 |
| 9899505 |
Conductivity improvements for III-V semiconductor devices |
Marko Radosavljevic, Prashant Majhi, Jack T. Kavalieros, Niti Goel, Wilman Tsai +3 more |
2018-02-20 |
$17,556,000 |
| 9876014 |
Germanium-based quantum well devices |
Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more |
2018-01-23 |
$21,180,000 |
| 9871106 |
Heterogeneous pocket for tunneling field effect transistors (TFETs) |
Uygar E. Avci, Roza Kotlyar, Benjamin Chu-Kung, Ian A. Young |
2018-01-16 |
$17,139,000 |
| 9865684 |
Nanoscale structure with epitaxial film having a recessed bottom portion |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Niti Goel +8 more |
2018-01-09 |
$14,051,000 |
