| 10153372 |
High mobility strained channels for fin-based NMOS transistors |
Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Glenn A. Glass, Willy Rachmady +1 more |
2018-12-11 |
$24,515,000 |
| 10147817 |
Techniques for integration of Ge-rich p-MOS source/drain |
Glenn A. Glass, Tahir Ghani, Ying-Feng PANG, Nabil G. Mistkawi |
2018-12-04 |
$23,085,000 |
| 10141311 |
Techniques for achieving multiple transistor fin dimensions on a single die |
Glenn A. Glass |
2018-11-27 |
$28,030,000 |
| 10121856 |
Integration methods to fabricate internal spacers for nanowire devices |
Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Mark Armstrong, Rafael Rios +2 more |
2018-11-06 |
$18,970,000 |
| 10109711 |
CMOS FinFET device having strained SiGe fins and a strained Si cladding layer on the NMOS channel |
Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Glenn A. Glass, Kelin J. Kuhn +1 more |
2018-10-23 |
$21,867,000 |
| 10109628 |
Transistor device with gate control layer undercutting the gate dielectric |
Nick Lindert, Glenn A. Glass |
2018-10-23 |
$21,867,000 |
| 10090383 |
Column IV transistors for PMOS integration |
Glenn A. Glass |
2018-10-02 |
$23,827,000 |
| 10084087 |
Enhanced dislocation stress transistor |
Cory E. Weber, Mark Liu, Hemant Deshpande, Daniel B. Aubertine |
2018-09-25 |
$26,257,000 |
| 10084043 |
High mobility nanowire fin channel on silicon substrate formed using sacrificial sub-fin |
Gilbert Dewey, Matthew V. Metz, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani +4 more |
2018-09-25 |
$26,257,000 |
| 10074573 |
CMOS nanowire structure |
Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Annalisa Cappellani, Stephen M. Cea +2 more |
2018-09-11 |
$19,778,000 |
| 10014412 |
Pre-sculpting of Si fin elements prior to cladding for transistor channel applications |
Glenn A. Glass, Daniel B. Aubertine, Subhash M. Joshi |
2018-07-03 |
$24,450,000 |
| 9997414 |
Ge/SiGe-channel and III-V-channel transistors on the same die |
Glenn A. Glass, Karthik Jambunathan |
2018-06-12 |
$21,622,000 |
| 9966440 |
Tin doped III-V material contacts |
Glenn A. Glass, Michael Jackson, Harold W. Kennel |
2018-05-08 |
$30,284,000 |
| 9929273 |
Apparatus and methods of forming fin structures with asymmetric profile |
Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Gilbert Dewey, Nadia M. Rahhal-Orabi +3 more |
2018-03-27 |
$21,620,000 |
| 9893149 |
High mobility strained channels for fin-based transistors |
Stephen M. Cea, Glenn A. Glass, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +1 more |
2018-02-13 |
$15,494,000 |
| 9882009 |
High resistance layer for III-V channel deposited on group IV substrates for MOS transistors |
Glenn A. Glass |
2018-01-30 |
$22,157,000 |
| 9876113 |
Method for improving transistor performance through reducing the salicide interface resistance |
Boyan Boyanov, Glenn A. Glass, Thomas Hoffmann |
2018-01-23 |
$21,180,000 |
| 9859424 |
Techniques for integration of Ge-rich p-MOS source/drain contacts |
Glenn A. Glass, Tahir Ghani, Ying-Feng PANG, Nabil G. Mistkawi |
2018-01-02 |
$11,729,000 |
| 9859368 |
Integration methods to fabricate internal spacers for nanowire devices |
Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Mark Armstrong, Rafael Rios +2 more |
2018-01-02 |
$11,729,000 |
