| 10153372 |
High mobility strained channels for fin-based NMOS transistors |
Roza Kotlyar, Harold W. Kennel, Glenn A. Glass, Anand S. Murthy, Willy Rachmady +1 more |
2018-12-11 |
| 10109711 |
CMOS FinFET device having strained SiGe fins and a strained Si cladding layer on the NMOS channel |
Roza Kotlyar, Harold W. Kennel, Anand S. Murthy, Glenn A. Glass, Kelin J. Kuhn +1 more |
2018-10-23 |
| 10074573 |
CMOS nanowire structure |
Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Annalisa Cappellani +2 more |
2018-09-11 |
| 10026829 |
Semiconductor device with isolated body portion |
Annalisa Cappellani, Tahir Ghani, Harry Gomez, Jack T. Kavalieros, Patrick H. Keys +5 more |
2018-07-17 |
| 9935107 |
CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same |
Roza Kotlyar, Harold W. Kennel, Kelin J. Kuhn, Tahir Ghani |
2018-04-03 |
| 9911835 |
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs |
Roza Kotlyar, Gilbert Dewey, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more |
2018-03-06 |
| 9905651 |
GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation |
Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more |
2018-02-27 |
| 9905650 |
Uniaxially strained nanowire structure |
Seiyon Kim, Annalisa Cappellani |
2018-02-27 |
| 9893149 |
High mobility strained channels for fin-based transistors |
Anand S. Murthy, Glenn A. Glass, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +1 more |
2018-02-13 |