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High mobility strained channels for fin-based NMOS transistors |
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CMOS FinFET device having strained SiGe fins and a strained Si cladding layer on the NMOS channel |
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Strained channel region transistors employing source and drain stressors and systems including the same |
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Tin doped III-V material contacts |
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CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same |
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GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation |
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