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High mobility strained channels for fin-based NMOS transistors |
Stephen M. Cea, Harold W. Kennel, Glenn A. Glass, Anand S. Murthy, Willy Rachmady +1 more |
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P-tunneling field effect transistor device with pocket |
Uygar E. Avci, Ian A. Young |
2018-11-13 |
| 10115822 |
Methods of forming low band gap source and drain structures in microelectronic devices |
Rafael Rios, Kelin J. Kuhn |
2018-10-30 |
| 10109711 |
CMOS FinFET device having strained SiGe fins and a strained Si cladding layer on the NMOS channel |
Stephen M. Cea, Harold W. Kennel, Anand S. Murthy, Glenn A. Glass, Kelin J. Kuhn +1 more |
2018-10-23 |
| 9972686 |
Germanium tin channel transistors |
Ravi Pillarisetty, Van H. Le, Willy Rachmady, Marko Radosavljevic, Han Wui Then +4 more |
2018-05-15 |
| 9935107 |
CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same |
Stephen M. Cea, Harold W. Kennel, Kelin J. Kuhn, Tahir Ghani |
2018-04-03 |
| 9911835 |
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs |
Stephen M. Cea, Gilbert Dewey, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more |
2018-03-06 |
| 9893149 |
High mobility strained channels for fin-based transistors |
Stephen M. Cea, Anand S. Murthy, Glenn A. Glass, Daniel B. Aubertine, Tahir Ghani +1 more |
2018-02-13 |
| 9876014 |
Germanium-based quantum well devices |
Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more |
2018-01-23 |
| 9871106 |
Heterogeneous pocket for tunneling field effect transistors (TFETs) |
Uygar E. Avci, Gilbert Dewey, Benjamin Chu-Kung, Ian A. Young |
2018-01-16 |
| 9871117 |
Vertical transistor devices for embedded memory and logic technologies |
Brian S. Doyle, Uday Shah, Charles C. Kuo |
2018-01-16 |