Issued Patents 2018
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10153372 | High mobility strained channels for fin-based NMOS transistors | Stephen M. Cea, Harold W. Kennel, Glenn A. Glass, Anand S. Murthy, Willy Rachmady +1 more | 2018-12-11 |
| 10128356 | P-tunneling field effect transistor device with pocket | Uygar E. Avci, Ian A. Young | 2018-11-13 |
| 10115822 | Methods of forming low band gap source and drain structures in microelectronic devices | Rafael Rios, Kelin J. Kuhn | 2018-10-30 |
| 10109711 | CMOS FinFET device having strained SiGe fins and a strained Si cladding layer on the NMOS channel | Stephen M. Cea, Harold W. Kennel, Anand S. Murthy, Glenn A. Glass, Kelin J. Kuhn +1 more | 2018-10-23 |
| 9972686 | Germanium tin channel transistors | Ravi Pillarisetty, Van H. Le, Willy Rachmady, Marko Radosavljevic, Han Wui Then +4 more | 2018-05-15 |
| 9935107 | CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same | Stephen M. Cea, Harold W. Kennel, Kelin J. Kuhn, Tahir Ghani | 2018-04-03 |
| 9911835 | Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs | Stephen M. Cea, Gilbert Dewey, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more | 2018-03-06 |
| 9893149 | High mobility strained channels for fin-based transistors | Stephen M. Cea, Anand S. Murthy, Glenn A. Glass, Daniel B. Aubertine, Tahir Ghani +1 more | 2018-02-13 |
| 9876014 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more | 2018-01-23 |
| 9871106 | Heterogeneous pocket for tunneling field effect transistors (TFETs) | Uygar E. Avci, Gilbert Dewey, Benjamin Chu-Kung, Ian A. Young | 2018-01-16 |
| 9871117 | Vertical transistor devices for embedded memory and logic technologies | Brian S. Doyle, Uday Shah, Charles C. Kuo | 2018-01-16 |