| 10134727 |
High breakdown voltage III-N depletion mode MOS capacitors |
Sansaptak Dasgupta, Gerhard Schrom, Valluri Rao, Robert S. Chau |
2018-11-20 |
| 10096683 |
Group III-N transistor on nanoscale template structures |
Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more |
2018-10-09 |
| 10096682 |
III-N devices in Si trenches |
Sansaptak Dasgupta, Sanaz K. Gardner, Seung Hoon Sung, Marko Radosavljevic, Benjamin Chu-Kung +3 more |
2018-10-09 |
| 10056456 |
N-channel gallium nitride transistors |
Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung, Sanaz K. Gardner, Robert S. Chau |
2018-08-21 |
| 10050015 |
Multi-device flexible electronics system on a chip (SOC) process integration |
Ravi Pillarisetty, Sansaptak Dasgupta, Niloy Mukherjee, Brian S. Doyle, Marko Radosavljevic |
2018-08-14 |
| 10032911 |
Wide band gap transistor on non-native semiconductor substrate |
Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +2 more |
2018-07-24 |
| 10026845 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2018-07-17 |
| 10020371 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey +3 more |
2018-07-10 |
| 9972686 |
Germanium tin channel transistors |
Ravi Pillarisetty, Van H. Le, Willy Rachmady, Roza Kotlyar, Marko Radosavljevic +4 more |
2018-05-15 |
| 9947780 |
High electron mobility transistor (HEMT) and method of fabrication |
Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2018-04-17 |
| 9923087 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
Sansaptak Dasgupta, Marko Radosavljevic, Niloy Mukherjee, Niti Goel, Sanaz K. Gardner +3 more |
2018-03-20 |
| 9922826 |
Integrated circuit die having reduced defect group III-nitride layer and methods associated therewith |
Sansaptak Dasgupta, Marko Radosavljevic, Robert S. Chau, Sanaz K. Gardner, Seung Hoon Sung |
2018-03-20 |
| 9865684 |
Nanoscale structure with epitaxial film having a recessed bottom portion |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more |
2018-01-09 |