Issued Patents 2018
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10134727 | High breakdown voltage III-N depletion mode MOS capacitors | Sansaptak Dasgupta, Gerhard Schrom, Valluri Rao, Robert S. Chau | 2018-11-20 |
| 10096683 | Group III-N transistor on nanoscale template structures | Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more | 2018-10-09 |
| 10096682 | III-N devices in Si trenches | Sansaptak Dasgupta, Sanaz K. Gardner, Seung Hoon Sung, Marko Radosavljevic, Benjamin Chu-Kung +3 more | 2018-10-09 |
| 10056456 | N-channel gallium nitride transistors | Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung, Sanaz K. Gardner, Robert S. Chau | 2018-08-21 |
| 10050015 | Multi-device flexible electronics system on a chip (SOC) process integration | Ravi Pillarisetty, Sansaptak Dasgupta, Niloy Mukherjee, Brian S. Doyle, Marko Radosavljevic | 2018-08-14 |
| 10032911 | Wide band gap transistor on non-native semiconductor substrate | Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +2 more | 2018-07-24 |
| 10026845 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2018-07-17 |
| 10020371 | Contact techniques and configurations for reducing parasitic resistance in nanowire transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey +3 more | 2018-07-10 |
| 9972686 | Germanium tin channel transistors | Ravi Pillarisetty, Van H. Le, Willy Rachmady, Roza Kotlyar, Marko Radosavljevic +4 more | 2018-05-15 |
| 9947780 | High electron mobility transistor (HEMT) and method of fabrication | Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2018-04-17 |
| 9923087 | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation | Sansaptak Dasgupta, Marko Radosavljevic, Niloy Mukherjee, Niti Goel, Sanaz K. Gardner +3 more | 2018-03-20 |
| 9922826 | Integrated circuit die having reduced defect group III-nitride layer and methods associated therewith | Sansaptak Dasgupta, Marko Radosavljevic, Robert S. Chau, Sanaz K. Gardner, Seung Hoon Sung | 2018-03-20 |
| 9865684 | Nanoscale structure with epitaxial film having a recessed bottom portion | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2018-01-09 |